參數(shù)資料
型號: BAP63-03
廠商: 樂山無線電股份有限公司
英文描述: Silicon PIN diode
中文描述: 硅PIN二極管
文件頁數(shù): 2/2頁
文件大?。?/td> 111K
代理商: BAP63-03
LESHAN RADIO COMPANY, LTD.
S25–2/2
BAP63-03
10
1
10
-1
0
4
8
12
16
20
I
F
(mA )
r
D
(
)
500
400
300
200
100
0
10
-1
1
10
10
2
V
R
( V )
C
d
(
f = 100 MHz; T
j
=25°C
f = 1 MHz; T
j
=25°C
ELECTRICAL CHARACTERISTICS
T
j
= 25°C unless otherwise specified. (Continue)
SYMBOL
τ
L
PARAMETER
charge carrier life time
CONDITIONS
TYP.
310
MAX.
UNIT
ns
when switched from I
F
=10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
=3 mA
L
S
series inductance
1.5
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
VALUE
120
UNIT
K/W
thermal resistance from junction to soldering-point
0
- 10
- 20
- 30
- 40
f (GHz )
0
-0.1
-0.2
-0.3
-0.4
-0.5
0
1
2
3
f (GHz )
|
2
|
2
(
Fig.1 Forward resistance as a function of
forward current; typical values.
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
|
2
|
2
(
Fig.3 Insertion loss ( |s
21
|
2
)of the diode in on-state
as a function of frequency; typical values.
Diode inserted in series with a 50
stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
Fig.4 Isolation ( |s
21
|
2
) of the diode in off-state as a
function of frequency; typical values.
Diode zero biased and inserted in
series with a 50
stripline circuit.
Tamb =25°C.
(1) I
F
=100 mA.
(2) I
F
=10 mA.
(3) I
F
= 1 mA.
(4) I
F
= 0.5 mA.
0
1
2
3
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