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參數(shù)資料
| 型號： | BAP55LX |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon PIN diode |
| 封裝： | BAP55LX<SOD882D (SOD882D)|<<http://www.nxp.com/packages/SOD882D.html<1<Always Pb-free,;BAP55LX/A<SOD882D (SOD882D)|<<http://www.nxp.com/packages/SOD882D.html<1<Alwa |
| 文件頁數(shù)： | 2/15頁 |
| 文件大小： | 174K |
| 代理商： | BAP55LX |
BAP55LX
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 13 January 2011
2 of 15
NXP Semiconductors
BAP55LX
Silicon PIN diode
4. Marking
Table 3.
Type number
BAP55LX
5. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
R
reverse voltage
I
F
forward current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
6. Thermal characteristics
Table 5.
Symbol
R
th(j-sp)
7. Characteristics
Marking
Marking code
LC
Limiting values
Conditions
Min
-
-
-
65
65
Max
50
100
135
+150
+150
Unit
V
mA
mW
°
C
°
C
T
sp
= 90
°
C
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
78
Unit
K/W
Table 6.
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
V
F
forward voltage
I
R
reverse current
Characteristics
Conditions
I
F
= 50 mA
V
R
= 20 V
V
R
= 50 V
see
Figure 2
; f = 1 MHz;
V
R
= 0 V
V
R
= 1 V
V
R
= 20 V
see
Figure 3
; f = 100 MHz;
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
Min
-
-
-
Typ
0.95
-
-
Max
1.1
10
100
Unit
V
nA
nA
C
d
diode capacitance
-
-
-
0.28
0.23
0.18
-
-
0.28
pF
pF
pF
r
D
diode forward resistance
-
-
-
-
3.3
2.2
0.8
0.5
4.5
3.3
1.2
0.8
Ω
Ω
Ω
Ω
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