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參數(shù)資料
| 型號： | BAP51LX |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon PIN diode |
| 封裝： | BAP51LX<SOD882T (SOD2)|<<http://www.nxp.com/packages/SOD882T.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 58K |
| 代理商： | BAP51LX |
BAP51LX_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 26 June 2007
3 of 8
NXP Semiconductors
BAP51LX
Silicon PIN diode
L
ins
insertion loss
see
Figure 4
; I
F
= 0.5 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
see
Figure 4
; I
F
= 1 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
see
Figure 4
; I
F
= 10 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
see
Figure 4
; I
F
= 100 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
; measured at
I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
-
-
-
0.36
0.36
0.38
-
-
-
dB
dB
dB
L
ins
insertion loss
-
-
-
0.25
0.26
0.27
-
-
-
dB
dB
dB
L
ins
insertion loss
-
-
-
0.12
0.14
0.15
-
-
-
dB
dB
dB
L
ins
insertion loss
-
-
-
-
0.09
0.10
0.12
0.55
-
-
-
-
dB
dB
dB
μ
s
τ
L
charge carrier life time
L
S
series inductance
-
0.4
-
nH
Table 6.
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Characteristics
…continued
Conditions
Min
Typ
Max
Unit
f = 1 MHz; T
j
= 25
°
C.
Diode capacitance as a function of reverse
voltage; typical values
f = 100 MHz; T
j
= 25
°
C.
Forward resistance as a function of forward
current; typical values
Fig 1.
Fig 2.
001aag633
V
R
(V)
0
20
16
8
12
4
200
100
300
400
C
d
(fF)
0
001aag634
I
F
(mA)
10
1
10
2
10
1
10
1
10
2
r
D
(
)
10
1
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