參數(shù)資料
型號(hào): BAP50-02
廠商: 樂山無線電股份有限公司
英文描述: General purpose PIN diode
中文描述: 通用PIN二極管
文件頁數(shù): 2/2頁
文件大?。?/td> 104K
代理商: BAP50-02
LESHAN RADIO COMPANY, LTD.
S23–2/2
BAP50-02
10
3
10
2
10
1
0
4
8
12
16
20
I
F
(mA )
r
D
(
)
600
400
200
0
10
-1
1
10
10
2
V
R
( V )
C
d
(
f = 100 MHz; T
j
=25°C
f = 1 MHz; T
j
=25°C
ELECTRICAL CHARACTERISTICS
T
j
= 25°C unless otherwise specified. (Continue)
SYMBOL
τ
L
PARAMETER
charge carrier life time
CONDITIONS
MIN
TYP.
1.05
MAX.
UNIT
μ
s
when switched from I
F
=10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
=3 mA
I
F
= 100 mA; f = 100 MHz
L
S
Note
series inductance
0.6
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
VALUE
85
UNIT
K/W
thermal resistance from junction to soldering-point
0
-5
-10
-15
-20
-25
f (GHz )
0
-1
-2
-3
-4
-5
0.5
1
1.5
2
2.5
3
f (GHz )
|
2
|
2
(
Fig.1 Forward resistance as a function of
forward current; typical values.
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
|
2
|
2
(
0.5
1
1.5
2
2.5
3
I
F
=10 mA.
I
F
= 1 mA.
I
F
= 0.5 mA.
Fig.3 Insertion loss ( |s
21
|
2
)of the diode in on-state
as a function of frequency; typical values.
Diode inserted in series with a 50
stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
Fig.4 Isolation ( |s
21
|
2
) of the diode in off-state as a
function of frequency; typical values.
Diode zero biased and inserted in
series with a 50
stripline circuit.
Tamb =25°C.
相關(guān)PDF資料
PDF描述
BAP50-02 Silicon PIN diode
BAP50-02 Silicon PIN diode
BAP50-03 General purpose PIN diode
BAP50-03 General purpose PIN diode
BAP50-04W General purpose PIN diode
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