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參數(shù)資料
| 型號(hào)： | BAP1321LX |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon PIN diode |
| 封裝： | BAP1321LX<SOD882T (SOD2)|<<http://www.nxp.com/packages/SOD882T.html<1<Always Pb-free,; |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | BAP1321LX |
BAP1321LX_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 30 July 2007
2 of 8
NXP Semiconductors
BAP1321LX
Silicon PIN diode
4.
Marking
5.
Limiting values
6.
Thermal characteristics
7.
Characteristics
Table 3.
Type number
BAP1321LX
Marking
Marking code
LH
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
R
reverse voltage
I
F
forward current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
Limiting values
Conditions
Min
-
-
-
65
65
Max
60
100
130
+150
+150
Unit
V
mA
mW
°
C
°
C
T
sp
= 90
°
C
Table 5.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
74
Unit
K/W
Table 6.
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
V
F
forward voltage
I
R
reverse current
C
d
diode capacitance
Characteristics
Conditions
I
F
= 50 mA
V
R
= 60 V
see
Figure 1
; f = 1 MHz;
V
R
= 0 V
V
R
= 1 V
V
R
= 20 V
see
Figure 2
; f = 100 MHz;
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
see
Figure 3
; V
R
= 0 V;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Min
-
-
Typ
0.95
-
Max
1.1
100
Unit
V
nA
-
-
-
0.32
0.27
0.21
-
0.38
0.28
pF
pF
pF
r
D
diode forward resistance
-
-
-
-
3.3
2.4
1.2
0.9
5.0
3.6
1.8
1.3
ISL
isolation
-
-
-
17
12
10
-
-
-
dB
dB
dB
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