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參數(shù)資料
| 型號(hào)： | BAM80 |
| 廠(chǎng)商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | ER 14C 4#16 10#12 SKT PLUG |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 13K |
| 代理商： | BAM80 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 50 mA
BV
CES
I
C
= 20 mA
BV
EBO
I
E
= 5.0 mA
I
CBO
V
CB
= 30 V
I
CES
V
CE
= 30 V T
C
= 125
O
C
h
FE
V
CE
= 5.0 V I
C
= 500 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
UNITS
V
V
V
mA
mA
---
60
4.0
2.0
10
5.0
---
C
cb
V
CB
= 28 V
f = 1.0 MHz
75
pF
P
G
η
C
VSWR
V
CE
= 13.5 V P
OUT
=20 W f = 150 MHz
6.0
30:1
65
dB
%
---
NPN SILICON RF POWER TRANSISTOR
BAM80
DESCRIPTION:
The
ASI BAM80
is Designed for VHF
AM power amplifier Applications in the
range of 100 to 150 MHz.
FEATURES:
Common Emitter
P
G
= 6.0 dB at 20 W/150 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
8.5 A
V
CES
60 V
V
CEO
35 V
V
EBO
4.0 V
P
DISS
85 W
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
2.0 °C/W
PACKAGE STYLE .380 4L STUD
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
H
.090 / 2.29
.100 / 2.54
DIM
.220 / 5.59
.230 / 5.84
.490 / 12.45
.450 / 11.43
I
J
.155 / 3.94
.175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
C
B
E
E
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