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參數(shù)資料
| 型號： | BA892V-04W |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Band Switching Diodes - Dual, Series in SOT-323 |
| 中文描述： | 波段開關二極管-雙，系列采用SOT - 323 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 153K |
| 代理商： | BA892V-04W |
www.vishay.com
2
Document Number 85649
Rev. 1.2, 24-Jun-05
BA892V-04W
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Typical Characteristics (Tamb = 25
°
C unless otherwise specified)
Test condition
Symbol
V
R
I
R
V
F
C
D
C
D
C
D
r
f
r
f
r
f
t
rr
Min
35
Typ.
Max
Unit
V
I
R
= 10
μ
A
V
R
= 20 V
I
F
= 100 mA
f = 1 MHz, V
R
= 0
f = 1 MHz, V
R
= 1 V
f = 1 MHz, V
R
= 3 V
f = 100 MHz, I
F
= 1 mA
f = 100 MHz, I
F
= 3 mA
f = 100 MHz, I
F
= 10 mA
I
F
= 10 mA, I
R
= 6 mA, i
R
= 3 mA
Reverse current
20
nA
Forward voltage
1.1
V
Diode capacitance
1.1
pF
0.9
1.2
pF
0.85
1.1
pF
Forward resistance
0.6
0.45
0.7
0.34
0.5
Charge carrier life time
90
ns
Figure 1. Forward Resistance vs. Forward Current
Figure 2. Diode Capacitance vs. Reverse Voltage
I - Forward Current (mA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
4
8
12
16
20
24
28
18332
V
R
- Reverse Voltage (V)
C
D
f = 1 MHz
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Reverse Voltage vs. Reverse Current
0.01
0.10
1.00
10.00
100.00
0.5
0.6
0.7
0.8
0.9
1.0
I
F
-
V
F
- Forward Voltage ( V )
18324
0
0.01
10
20
30
40
50
60
70
0.1
1.0
10
100
1000
I
R
- Reverse Current (
μ
A )
18328
V
-
R
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BA892V-04W-GS08 | 功能描述:二極管 - 通用，功率，開關 RF PIN Diode RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BA892WT | 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:SILICON BAND SWITCHING DIODE |
| BA895 | 制造商:Infineon Technologies AG 功能描述:DIODE RF PIN SCD-80 |
| BA89502VH6327XTSA1 | |
| BA895E6327 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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