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參數(shù)資料
| 型號： | BA892V-04W-GS08 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Band Switching Diodes - Dual, Series in SOT-323 |
| 中文描述： | 波段開關(guān)二極管-雙，系列采用SOT - 323 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 153K |
| 代理商： | BA892V-04W-GS08 |
www.vishay.com
2
Document Number 85649
Rev. 1.2, 24-Jun-05
BA892V-04W
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Reverse voltage
Typical Characteristics (Tamb = 25
°
C unless otherwise specified)
Test condition
Symbol
V
R
I
R
V
F
C
D
C
D
C
D
r
f
r
f
r
f
t
rr
Min
35
Typ.
Max
Unit
V
I
R
= 10
μ
A
V
R
= 20 V
I
F
= 100 mA
f = 1 MHz, V
R
= 0
f = 1 MHz, V
R
= 1 V
f = 1 MHz, V
R
= 3 V
f = 100 MHz, I
F
= 1 mA
f = 100 MHz, I
F
= 3 mA
f = 100 MHz, I
F
= 10 mA
I
F
= 10 mA, I
R
= 6 mA, i
R
= 3 mA
Reverse current
20
nA
Forward voltage
1.1
V
Diode capacitance
1.1
pF
0.9
1.2
pF
0.85
1.1
pF
Forward resistance
0.6
0.45
0.7
0.34
0.5
Charge carrier life time
90
ns
Figure 1. Forward Resistance vs. Forward Current
Figure 2. Diode Capacitance vs. Reverse Voltage
I - Forward Current (mA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
4
8
12
16
20
24
28
18332
V
R
- Reverse Voltage (V)
C
D
f = 1 MHz
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Reverse Voltage vs. Reverse Current
0.01
0.10
1.00
10.00
100.00
0.5
0.6
0.7
0.8
0.9
1.0
I
F
-
V
F
- Forward Voltage ( V )
18324
0
0.01
10
20
30
40
50
60
70
0.1
1.0
10
100
1000
I
R
- Reverse Current (
μ
A )
18328
V
-
R
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參數(shù)描述 |
|---|---|
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| BA89502VH6327XTSA1 | |
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