參數(shù)資料
型號(hào): BA318
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: High-speed diodes
中文描述: 0.1 A, 60 V, SILICON, SIGNAL DIODE, DO-35
文件頁(yè)數(shù): 4/7頁(yè)
文件大小: 39K
代理商: BA318
1996 Sep 03
4
Philips Semiconductors
Product specification
High-speed diodes
BA316; BA317; BA318
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0
100
200
0
100
MBG452
Tamb (
o
C)
IF
(mA)
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
1
2
0
100
200
MBG465
VF (V)
IF
(mA)
(1)
(2)
(3)
(1) T
j
= 175
°
C; typical values.
(2) T
j
= 25
°
C; typical values.
(3) T
j
= 25
°
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
°
C prior to surge.
handbook, full pagewidth
MBG704
10
tp (
μ
s)
1
IFSM
(A)
2
10
1
10
4
10
2
10
3
10
1
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