參數(shù)資料
型號(hào): BA220
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: High-speed diode
中文描述: SILICON, STABISTOR DIODE, DO-35
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 41K
代理商: BA220
1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed diode
BA220
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
High switching speed: max. 4 ns
General application
Continuous reverse voltage:
max. 10 V
Repetitive peak reverse voltage:
max. 10 V
Repetitive peak forward current:
max. 400 mA.
APPLICATIONS
High-speed switching.
DESCRIPTION
The BA220 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diode is type branded.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
10
10
V
V
mA
mA
see Fig.2; note 1
200
400
square wave; T
j
= 25
°
C prior to
surge; see Fig.4
t = 1
μ
s
t = 100
μ
s
t = 1 s
T
amb
= 25
°
C; note 1
9
3
1
A
A
A
mW
°
C
°
C
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
350
+200
200
65
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