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參數資料
| 型號： | B772SS-Q-AE3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 中文描述： | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | B772SS-Q-AE3-R |
B772SS
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-089.B
ABS OLUT E MAX IMUM RAT INGS
(Ta = 25
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
RATINGS
-40
-30
-5
-7
-3
-0.6
10
350
+150
-55 ~ +150
UNIT
V
V
V
A
A
A
W
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Pulse
DC
Collector Current
Base Current
Tc=25
Ta=25
Collector Dissipation
P
D
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
ELECT RICAL CHARACT ERIS T ICS
(Ta= 25
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
I
C
=-2A, I
B
=-0.2A
V
BE(SAT)
I
C
=-2A, I
B
=-0.2A
f
T
V
CE
=-5V, I
C
=-0.1A
Cob
V
CB
=-10V, I
E
=0,f=1MHz
TEST CONDITIONS
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-30V ,I
E
=0
V
CE
=-30V ,I
B
=0
V
EB
=-3V, I
C
=0
V
CE
=-2V, I
C
=-20mA
V
CE
=-2V, I
C
=-1A
MIN
-40
-30
-5
30
100
TYP
200
150
-0.3
-1.0
80
45
MAX
-1000
-1000
-1000
400
-0.5
-2.0
UNIT
V
V
V
nA
nA
nA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(Note 1)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Note 1: Pulse test: P
W
<300
μ
s, Duty Cycle<2%
V
V
MHz
pF
CLAS S IFICAT ION OF h
FE2
RANK
RANGE
Q
P
E
100 ~ 200
160 ~ 320
200 ~ 400
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