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參數(shù)資料
| 型號： | B772-TO-92 |
| 廠商： | 江蘇長電科技股份有限公司 |
| 英文描述： | TRANSISTOR (PNP) |
| 中文描述： | 晶體管（進(jìn)步黨） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 36K |
| 代理商： | B772-TO-92 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
B772
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM:
625 mW (Tamb=25
℃
)
Collector current
I
CM:
-3 A
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic=-100μA ,I
E
=0
-40
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= -10 mA , I
B
=0
-30
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -100μA, I
C
=0
-6
V
Collector cut-off current
I
CBO
V
CB
= -40 V, I
E
=0
-1
μA
Collector cut-off current
I
CEO
V
CE
=-30 V, I
B
=0
-10
μA
Emitter cut-off current
I
EBO
V
EB
=-6V, I
C
=0
-1
μA
h
FE(1)
V
CE
= -2V, I
C
= -1A
60
400
DC current gain
h
FE(2)
V
CE
=-2V, I
C
= -100mA
32
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-2A, I
B
= -0.2A
-0.5
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-2A, I
B
= -0.2A
-1.5
V
Transition frequency
f
T
V
CE
= -5V, I
C
=-0.1A
f =
10MHz
50
MHz
CLASSIFICATION OF h
FE(1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
TO-92
1
2
3
1.
EMITTER
2. COLLECTOR
3.
BASE
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