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參數(shù)資料
| 型號： | AZ574ZTR |
| 廠商： | BCD Semiconductor Manufacturing Limited |
| 英文描述： | 33V HIGH PRECISE VOLTAGE REFERENCE |
| 中文描述： | 33V的高精密電壓基準 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 117K |
| 代理商： | AZ574ZTR |
33V HIGH PRECISE VOLTAGE REFERENCE AZ574
Preliminary Datasheet
4
Sep. 2005 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
Parameter
Symbol
Value
Unit
Cathode Current
I
KA
40
mA
Power Dissipation
P
D
700 (T
A
=75
o
C)
mW
Storage Temperature
T
STG
-40 to 125
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-
imum Ratings" for extended periods may affect device reliability.
Parameter
Symbol
Min
Max
Unit
Operating Ambient Temperature
T
A
-20
75
o
C
Operating Cathode Current
I
KA
30
mA
Recommended Operating Conditions
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Cathode Voltage
V
KA
I
KA
=5mA
31
35
V
Cathode Voltage Temperature Drift
V
KA
/
T
I
KA
=5mA, T
A
=-20 to 75
o
C
(Note 2)
0.6
mV/
o
C
Dynamic Impedance
Z
KA
I
KA
=5mA, f=1KHz, I
AC
=0.5mA
5
12
(T
A
=25
o
C, unless otherwise specified.)
Electrical Characteristics
Note 2: Cathode voltage temperature drift is defined as maximum (worst case) change divided by the total tem-
perature range.
1.5
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