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參數(shù)資料
| 型號： | AWT6302RM9Q7 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, 1.10 MM HEIGHT, ROHS COMPLIANT, MINIATURE, M9, 8 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 422K |
| 代理商： | AWT6302RM9Q7 |
09/2008
AWT6302R
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.1
M9 Package
8 Pin 3 mm x 3 mm x 1.1 mm
Surface Mount Module
Figure 1: Block Diagram
FEATURES
InGaP HBT Technology
High Efficiency:
39%, VMODE = 0 V
40%, VMODE = +2.85 V (no mode switching)
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1 A
VREF = +2.85 V (+2.75 V min over temp)
Optimized for a 50 System
Low Profile Miniature Surface Mount Package:
1.1 mm
CDMA 1XRTT, 1xEV-DO Compliant
Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
RoHS-Compliant Package, 250 oC MSL-3
APPLICATIONS
CDMA/EVDO PCS-band Wireless Handsets and
Data Devices
PRODUCT DESCRIPTION
The AWT6302R meets the increasing demands for
higher efficiency and linearity in CDMA 1X handsets,
while reducing pcb area by 44%. The package pinout
was chosen to enable handset manufacturers to
switch from a 4 mm x 4 mm PA module with very few
layout changes to the phone board. The PA module is
optimizedforVREF = +2.85 V. The device is manufactured
on an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
3 mm x 3 mm x 1.1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50 system.
Bias Control
VCC
VREF
RFIN
RFOUT
GND
VMODE
1
7
5
8
6
GND at slug (pad)
3
4
2
VCC
GND
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