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參數(shù)資料
| 型號(hào)： | AWT6167R |
| 廠商： | ANADIGICS, Inc. |
| 英文描述： | GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control |
| 中文描述： | GSM900/DCS雙頻功率放大器模塊，集成了功率控制 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 291K |
| 代理商： | AWT6167R |
06/2005
PRODUCT DESCRIPTION
As with previous generations, the AWT6167R
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
The AWT6167R input and output terminals are
internal matched to 50 ohms and DC blocked,
AWT6167R
GSM900/DCS
Dual Band Power Amplifier Module
With Integrated Power Control
PRELIMINARY DATA SHEET - Rev 1.0
M15 Package
18 Pin 6 mm x 6 mm x 1.3 mm
Amplifier Module
FEATURES
Integrated Vreg (regulated supply)
Harmonic Performance
≤
-20 dBm
High Efficiency (PAE) at Pmax:
-GSM900, 55%
-DCS, 53%
+35 dBm GSM900 Output Power at 3.5 V
+33 dBm DCS Output Power at 3.5 V
55 dB Dynamic Range
GPRS Class 12 Capable
RoHS Compliant Package, 250°C MSL-3
APPLICATIONS
Dual/Tri/Quad Band Handsets & PDAs
reducing the number of external components
required in the final application. Both PA die, GSM900
and DCS, are fabricated using state of the art InGaP
HBT technology, known for it is proven reliability and
temperature stability.
Figure 1: Block Diagram
H(s)
MATCH
MATCH
MATCH
MATCH
V
CC2
V
CC_OUT
DCS
_OUT
V
CC2
GSM900
_OUT
GSM900
_IN
DCS
_IN
V
RAMP
C
EXT
TX_
EN
V
BATT
B
S
CMOS BIAS/Integrated Power Control
AT17
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