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參數(shù)資料
| 型號： | AWT6135M7P8 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module |
| 中文描述： | TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, DSO10 |
| 封裝： | 4 X 4 MM, 1.50 MM HEIGHT, MODULE, 10 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 260K |
| 代理商： | AWT6135M7P8 |
08/2003
AWT6135
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.1
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
Figure 1: Block Diagram
Bias Control
V
CC
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
V
CC
GND
GND
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
4mm x 4mm surface mount package incorporates
matching networks optimized for output power,
efficiency, and linearity in a 50
system.
FEATURES
InGaP HBT Technology
High Efficiency: 40%
Low Quiescent Current: 48 mA
Low Leakage Current in Shutdown Mode: <1
μ
A
V
REF
= +2.8 V (+2.7 V min over temp)
Optimized for a 50
System
Low Profile Miniature Surface Mount Package:
1.56mm Max
CDMA 1XRTT Compliant
CDMA 1xEV-DO Compliant
APPLICATIONS
PCS CDMA Wireless Handsets
Dual Band CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6135 meets the increasing demands for
higher efficiency and linearity in CDMA 1XRTT
handsets. The PA module is optimized for V
REF
= +2.8 V,
a requirement for compatibility with the Qualcomm
6000 chipset. The device is manufactured on an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
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相關代理商/技術參數(shù) |
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| AWT6135R | 制造商:ANADIGICS Inc 功能描述:RF & MW POWER AMPLIFIER |
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| awt6135rm7p9 | 制造商:Rochester Electronics LLC 功能描述: 制造商:ANADIGICS Inc 功能描述: |
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| AWT6136_08 | 制造商:ANADIGICS 制造商全稱:ANADIGICS, Inc 功能描述:450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module |
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