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參數(shù)資料
| 型號： | AWT1904 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | AWT1904 |
This data sheet contains technical information about product ANADIGICS is planning to introduce. The data and product specifications
are subject to change prior to formal introduction. Please note: This device is not to be used for device qualification or production.
35 Technology Drive, Warren NJ 07059
z
(908)668 5000
z
(908)668 5132
z
Email: mktg@anadigics.com 04/23/98
3
3. Case Outline and Pin Description
a
0.91
0°
1.78
1.02
0.38 REF.
0.036
0°
0.070
0.040
0.015 REF.
1.02
1.25
0.41
0.040
0.049
0.016
L
e
0.63 BSC
5.79
0.36
0.025 BSC
0.228
0.014
0.012
0.009
0.30
0.23
0.20
0.15
0.008
0.006
E
A
A
A
D
B
C
0.00
1.32
4.85
3.73
1.35
0.10
1.63
4.98
3.99
1.73
0.157
0.068
0.004
0.064
0.196
0.147
0.053
0.000
0.052
0.191
MILLIMETERS
MIN.
INCHES
MIN.
NOTE
MAX.
MAX.
0.246
0.016
6.25
0.41
H
h
LE
a
8°
8°
2
3
4
3. PROTRUSIONS. INTER-LEAD FLASH AND PROTRUSIONS
SHALL NOT EXCEED 0.010 [0.25mm] PER SIDE.
1. CONTROLLING DIMENSION: INCHES
4. MAXIMUM LEAD TWIST/SKEW TO BE 0.002 [0.05mm]
5. SLUG AREA.
6. STAND OFF IS MEASURED FROM BOTTOM OF HEAT SLUG
TO THE SEATING PLANE.
2. PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS
PER SIDE.
NOTES:
S
T
R
0.100
0.070
2.54
1.78
5
5
5
S
T
6
o
Pin
1
2
3
4
5
6
7,8
9,10
11
12
13
14
15
16
Signal
V
REF
V
DDC
V
SS
GND
V
TSS
V
D2
V
D3A
V
D3B
GND
TP
2
V
D1
V
G1
RF
IN
GND
Description
Part of biasing control circuit should be set to + 3.6 V
Bias circuit Supply (+ 4.8 V, 1 mA )
Negative Supply (- 3.6V)
RF and DC Ground
Temperature stabilization DC feedback
Drain of the 2nd stage (+ 4.8 V)
Drain of 3rd stage (+ 4.8 V) and RF
OUT
Drain of 3rd stage (+ 4.8 V) and RF
OUT
RF and DC Ground
Same as gate 3
Drain of the 1
st
stage (+ 4.8 V)
Gate of first stage (bias Indication and tuning )
RF power input, DC blocked
RF and DC Ground
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