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8
ADVANCED PRODUCT INFORMATION - Rev 0.1
12/2002
AWS5522
APPLICATION INFORMATION
Figure 14: Unpackaged Die Application Schematic
Unpackaged Die Applications
Bonding and circuit connections for the unpackaged
AWS5522 die are shown in Figure 14, and application
details are listed in the following notes:
1. Cb are DC blocking capacitors external to the
device. A value of 100pF is sufficient for operation to
500MHz. The values may be tailored to provide
specific electrical responses. The isolation of the switch
provides enough decoupling of the RF1 and RF2 ports
so that overall switch performance is not affected.
2. The VS1 and VS2 pins provides a fixed voltage
potential to the common port of the switch. To get the
best linear performance, either VS1 or VS2 should be
tied to the logic high voltage potential (not the power
supply). Only one of these pins need be attached, with
the decision determined by external circuit layout.
Current draw on this pin is less than 5
μ
A.
3. The RF Ground bondwires should be kept as short
as possible and bonded directly to a good RF ground
for best broadband performance.
4. L
ESD
provides a means to increase the ESD
protection on a specific RF port, typically the port
attached to the antenna. The ESD rating of the device
is
±
125V HBM overall. This rating is associated with
the control pin to RF port path. RF port to RF port/RF
Gnd has been determined to be >
±
500V HBM for this
technology. By using L
ESD
as an RF choke on a port,
an ESD protection to
±
8kV contact discharge can be
achieved.
5. The die may be attached by either conductive or
non-conductive epoxy formulated for attaching
semiconductor parts. The back of the die is electrically
isolated from the switch circuit and can be grounded
or left isolated.
RFC
VS2
RF1G
RF1
V1
Common (Ant.) RF Port
RF Gnd, Path 2 Shunt
Control Pin, RF Path 2
RF Gnd, Path 1 Shunt
RF Port 1
Common Port
Supply
Note 2 (Logic high)
C
b
C
b
L
ESD
Note 4
Keep RF Gnd Bondwires Short
2 Places, Note 3
V2
RF2G
RF2
C
b
RF Port 2
Control Pin, RF Path 1
VS1