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參數(shù)資料
| 型號： | AVD002P |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 17K |
| 代理商： | AVD002P |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 1 mA
BV
CER
I
C
= 5 mA
BV
EBO
I
E
= 1 mA
I
CES
V
CE
= 35 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
45
45
3.5
30
UNITS
V
V
V
mA
---
R
BE
= 10
1.0
300
P
G
η
C
V
CC
= 35 V P
OUT
= 2 W f = 1025 - 1150 MHz
9.0
35
dB
%
NPN SILICON RF POWER TRANSISTOR
AVD002F
DESCRIPTION:
The
ASI AVD002F
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
250 mA
V
CC
37 V
P
DISS
10 W @ T
C
≤
100
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
10
O
C/W
PACKAGE STYLE .250 2L FLG(B)
ORDER CODE: ASI10552
MINIMUM
inches / mm
1.050 / 26.67
.120 / 3.05
.245 / 6.22
.552 / 14.02
.790 / 20.07
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.255 / 6.48
.572 / 14.53
.810 / 20.57
.140 / 3.56
H
.003 / 0.08
.007 / 0.18
DIM
K
I
J
.052 / 1.32
.072 / 1.83
.130 / 3.30
.088 x 45°
CHAMFER
A
B
D
E
F
G
H
I
K
C
J
.100 X 45°
.095 / 2.41
.105 / 2.67
.285 / 7.24
.210 / 5.33
.120 / 3.05
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| AVD002P_07 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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| AVD015F | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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