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參數(shù)資料
| 型號： | AVD0.5P |
| 英文描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SOT-122VAR |
| 中文描述： | 晶體管|晶體管|叩| 20V的五（巴西）總裁| 300mA的一（c）|的SOT - 122VAR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 12K |
| 代理商： | AVD0.5P |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CBO
I
C
= 1.0 mA
BV
CEO
I
C
= 5.0 mA
BV
EBO
I
E
= 1.0 mA
I
CES
V
CE
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
50
UNITS
V
V
V
mA
---
20
3.5
1.0
15
120
P
G
V
CC
= 12.5 V P
OUT
= 0.5 W f = 1025 - 1150 MHz
10
dB
NPN SILICON RF POWER TRANSISTOR
AVD0.5P
DESCRIPTION:
The
ASI AVD0.5P
is Designed for
Class A, DME/TACAN Applications up
to 1150 MHz.
FEATURES:
Class A Operation
P
G
= 10 dB at 0.5 W/1150 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
300 mA
V
CE
20 V
P
DISS
--- W
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
35.0 °C/W
PACKAGE STYLE .280 4L PILL
ORDER CODE: ASI10551
MINIMUM
inches / mm
.004 / 0.10
.275 / 6.99
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
inches / mm
.285 / 7.24
.060 . 1.52
.130 / 3.30
.006 / 0.15
1.055 / 26.80
DIM
.220 / 5.59
.230 / 5.84
.118 / 3.00
D
E
F
B
C
A
E
E
C
B
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