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參數(shù)資料
| 型號(hào)： | ATR7032-PVQW |
| 廠商： | ATMEL CORP |
| 元件分類： | 衰減器 |
| 英文描述： | High Gain Power Amplifier for 802.11bg WLAN Systems |
| 中文描述： | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, PLASTIC, MO-220, QFN-16 |
| 文件頁(yè)數(shù)： | 1/15頁(yè) |
| 文件大小： | 363K |
| 代理商： | ATR7032-PVQW |
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Features
Frequency Range 2.4 GHz to 2.5 GHz
Supply Voltage 2.7V to 3.6V
32 dB Power Gain
23 dBm Linear Output Power for IEEE 802.11b Mode Operation
EVM < 2.0% at 19 dBm Output Power for IEEE 802.11g Mode Operation
On-chip Power Detector with 20 dB Dynamic Range
Power-down Mode and Biasing Control
Input and Interstage Matching Fully On-chip
Low Profile Lead-free Plastic Package QFN16 (3
×
3
×
0.9 mm)
Applications
IEEE 802.11b DSSS WLAN
IEEE 802.11g OFDM WLAN
PC Cards, PCMCIA, Access Points
2.4 GHz ISM Band Application
1.
This power amplifier (PA) is designed for high-performance 802.11b and 802.11g
multi-mode applications such as Mini PCI and PCMCIA for portable devices and
access points. The low profile plastic package with internal input matching to 50
and
on-chip interstage matching minimizes the PCB board-space and allows simplified
integration with very few passive components. The on-chip power detector provides a
voltage linear to the output power, while the standby/bias control logic provides
power-saving and shutdown options. The PA is realized as a three stage PA with
internal interstage matching and an open-collector output structure.
Description
The power amplifier is designed using Atmel’s Silicon-Germanium (SiGe2) process
and provides excellent linearity and noise performance, high gain, and good power-
added efficiency.
High Gain
Power Amplifier
for 802.11b/g
WLAN Systems
ATR7032
Preliminary
Rev. 4846B–WLAN–04/05
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