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參數(shù)資料
| 型號(hào)： | ATP602 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 600 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 270K |
| 代理商： | ATP602 |
ATP602
No. A1543-3/4
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain
Current,
I
D
--
A
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
Ω
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
Ω
Case Temperature, Tc --
°C
Drain Current, ID -- A
Diode Forward Voltage, VSD -- V
Source
Current,
I
S
--
A
Gate-to-Source Voltage, VGS -- V
ID -- VDS
ID -- VGS
RDS(on) -- VGS
RDS(on) -- Tc
IS -- VSD
| yfs | -- I
D
Drain Current, ID -- A
Switching
T
ime,
SW
T
ime
-
ns
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Forward
T
ransfer
Admittance,
|
y
fs
|
-
S
IT14903
IT14900
--50
--25
150
0
25
50
75
100
125
25
°C
75
°C
Tc= --25
°C
--25
°C
25
°C
Tc=75°C
8
412
16
20
18
6
210
14
0
8
2
4
6
3
1
5
7
IT14902
6789
10
15
11
12
13
14
5
0
1
6
3
2
5
4
0
1
2
6
5
4
3
IT14901
6
4
2
8
10
20
12
14
16
18
0
2
14
8
12
4
10
6
Tc=25
°C
VGS=5V
15V
VDS=20V
V GS
=10V
, I D
=2.5A
8V
6V
10V
IT14904
0.1
23
5
7
3
1.0
2
7
5
2
3
7
5
2
1.0
37
5
Tc=
--25
°C
25
°C
75°
C
VDS=10V
IT14905
1.4
0.8
1.0
1.2
0.4
0.6
0.2
0.01
0.1
5
7
3
2
1.0
5
7
3
2
10
5
7
3
2
T
c=75
°C
25
°C
--25
°C
7V
ID=2.5A
Single pulse
VGS=0V
Single pulse
0.1
1.0
2
23
5
7
3
7
5
100
10
7
5
3
2
5
3
2
IT14906
td(off)
td(on)
VDD=200V
VGS=10V
tf
t r
IT14907
020
10
30
100
2
3
10
5
2
7
1000
3
2
5
7
f=1MHz
60
50
40
Ciss
Crss
Coss
Ciss,
Coss,
Crss
-
pF
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PDF描述 |
|---|---|
| ATP602 | 5 A, 600 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| ATS-1-RFREQ5 | QUARTZ CRYSTAL RESONATOR, 36 MHz - 70 MHz |
| ATS-1-RFREQ4 | QUARTZ CRYSTAL RESONATOR, 30 MHz - 35.999 MHz |
| AWCR-FREQMA-C22-AMMO | CERAMIC RESONATOR, 8.01 MHz - 13 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATP602_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP602-TL-H | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP613 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| ATP613_11 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP613_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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