- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51302 > ATP104 75 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | ATP104 |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 257K |
| 代理商： | ATP104 |
ATP104
No. A1406-4/4
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
This catalog provides information as of February, 2009. Specications and information herein are subject
to change without notice.
Note on usage : Since the ATP104 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
--
V
EAS -- Ta
A
valanche
Ener
gy
derating
factor
--
%
Ambient Temperature, Ta --
°C
0
25
50
75
100
125
150
100
80
60
20
40
120
175
IT10478
IT14398
IT14397
IT14396
010
20
50
40
70
60
30
80
0
--2
--4
--6
--1
--3
--5
--8
--7
--9
--10
VDS= --15V
ID= --75A
A S O
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
PD -- Tc
Allowable
Power
Dissipation,
P
D
--
W
Case Temperature, Tc --
°C
--0.1
--1.0
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
--10
--0.1
IDP= --225A
ID= --75A
100
μs
1ms
10ms
100ms
DC
operation
Operation in
this area is
limited by RDS(on).
--1.0
23
5
7
2
--10
35 7
2
3
5
10
μs
--100
0
20
40
60
80
100
140
120
60
50
30
20
40
10
70
160
PW
≤10μs
Tc=25
°C
Single pulse
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATP113TL | 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP113 | 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP114TL | 55 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP114 | 55 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP201 | 35 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATP104_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP-104A060B | 制造商:DMC 功能描述: |
| ATP104-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP104-TL-HX | 功能描述:MOSFET P-CH 30V 75A ATPAK 制造商:on semiconductor 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:P 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:75A（Ta） 不同 Id 時的 Vgs（th）（最大值）:- 不同 Vgs 時的柵極電荷?（Qg）（最大值）:76nC @ 10V 不同 Vds 時的輸入電容（Ciss）（最大值）:3950pF @ 10V FET 功能:- 功率耗散（最大值）:60W（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:8.4 毫歐 @ 38A，10V 工作溫度:150°C（TJ） 安裝類型:表面貼裝 供應(yīng)商器件封裝:ATPAK 封裝/外殼:ATPAK（2 引線 + 接片） 標準包裝:3,000 |
| ATP106 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。