參數(shù)資料
型號(hào): ATF16V8B-10SI
廠商: Atmel
文件頁(yè)數(shù): 14/26頁(yè)
文件大小: 0K
描述: IC PLD EE 10NS 20-SOIC
標(biāo)準(zhǔn)包裝: 37
系列: 16V8
可編程類型: EE PLD
宏單元數(shù): 8
輸入電壓: 5V
速度: 10ns
安裝類型: 表面貼裝
封裝/外殼: 20-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 20-SOIC W
包裝: 管件
其它名稱: ATF16V8B10SI
21
7707F–AVR–11/10
AT90USB82/162
4.
Write new EEPROM data to EEDR (optional).
5.
Write a logical one to the EEMPE bit while writing a zero to EEPE in EECR.
6.
Within four clock cycles after setting EEMPE, write a logical one to EEPE.
The EEPROM can not be programmed during a CPU write to the Flash memory. The software
must check that the Flash programming is completed before initiating a new EEPROM write.
Step 2 is only relevant if the software contains a Boot Loader allowing the CPU to program the
Flash. If the Flash is never being updated by the CPU, step 2 can be omitted. See “Memory Pro-
gramming” on page 243 for details about Boot programming.
Caution: An interrupt between step 5 and step 6 will make the write cycle fail, since the
EEPROM Master Write Enable will time-out. If an interrupt routine accessing the EEPROM is
interrupting another EEPROM access, the EEAR or EEDR Register will be modified, causing the
interrupted EEPROM access to fail. It is recommended to have the Global Interrupt Flag cleared
during all the steps to avoid these problems.
When the write access time has elapsed, the EEPE bit is cleared by hardware. The user soft-
ware can poll this bit and wait for a zero before writing the next byte. When EEPE has been set,
the CPU is halted for two cycles before the next instruction is executed.
Bit 0 – EERE: EEPROM Read Enable
The EEPROM Read Enable Signal EERE is the read strobe to the EEPROM. When the correct
address is set up in the EEAR Register, the EERE bit must be written to a logic one to trigger the
EEPROM read. The EEPROM read access takes one instruction, and the requested data is
available immediately. When the EEPROM is read, the CPU is halted for four cycles before the
next instruction is executed.
The user should poll the EEPE bit before starting the read operation. If a write operation is in
progress, it is neither possible to read the EEPROM, nor to change the EEAR Register.
The calibrated Oscillator is used to time the EEPROM accesses. Table 5-2 lists the typical pro-
gramming time for EEPROM access from the CPU.
The following code examples show one assembly and one C function for writing to the
EEPROM. The examples assume that interrupts are controlled (e.g. by disabling interrupts glob-
ally) so that no interrupts will occur during execution of these functions. The examples also
Table 5-2.
EEPROM Programming Time
Symbol
Number of Calibrated RC Oscillator Cycles
Typ Programming Time
EEPROM write
(from CPU)
26,368
3.3 ms
相關(guān)PDF資料
PDF描述
ATF16V8B-10PI IC PLD 10NS 20DIP
ATF16V8B-10JI IC PLD 10NS 20PLCC
3-1734839-2 CONN FPC 32POS .5MM RT ANG SMD
IDT71V65803S100BQG8 IC SRAM 9MBIT 100MHZ 165FBGA
MPC870VR80 IC MPU POWERQUICC 80MHZ 256PBGA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF16V8B-10XC 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Highperformance EE PLD
ATF16V8B-10XI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable PLD
ATF16V8B-15GC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable PLD
ATF16V8B-15GI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable PLD
ATF16V8B-15GM 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable PLD