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參數(shù)資料
| 型號： | ATF16V8B-10JU |
| 廠商： | Atmel |
| 文件頁數(shù)： | 14/26頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC PLD 10NS 20PLCC |
| 標準包裝： | 48 |
| 系列： | 16V8 |
| 可編程類型： | EE PLD |
| 宏單元數(shù)： | 8 |
| 輸入電壓： | 5V |
| 速度： | 10ns |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 20-LCC（J 形引線） |
| 供應商設備封裝： | 20-PLCC |
| 包裝： | 管件 |
| 產(chǎn)品目錄頁面： | 610 (CN2011-ZH PDF) |
21
7707F–AVR–11/10
AT90USB82/162
4.
Write new EEPROM data to EEDR (optional).
5.
Write a logical one to the EEMPE bit while writing a zero to EEPE in EECR.
6.
Within four clock cycles after setting EEMPE, write a logical one to EEPE.
The EEPROM can not be programmed during a CPU write to the Flash memory. The software
must check that the Flash programming is completed before initiating a new EEPROM write.
Step 2 is only relevant if the software contains a Boot Loader allowing the CPU to program the
Flash. If the Flash is never being updated by the CPU, step 2 can be omitted. See “Memory Pro-
gramming” on page 243 for details about Boot programming.
Caution: An interrupt between step 5 and step 6 will make the write cycle fail, since the
EEPROM Master Write Enable will time-out. If an interrupt routine accessing the EEPROM is
interrupting another EEPROM access, the EEAR or EEDR Register will be modified, causing the
interrupted EEPROM access to fail. It is recommended to have the Global Interrupt Flag cleared
during all the steps to avoid these problems.
When the write access time has elapsed, the EEPE bit is cleared by hardware. The user soft-
ware can poll this bit and wait for a zero before writing the next byte. When EEPE has been set,
the CPU is halted for two cycles before the next instruction is executed.
Bit 0 – EERE: EEPROM Read Enable
The EEPROM Read Enable Signal EERE is the read strobe to the EEPROM. When the correct
address is set up in the EEAR Register, the EERE bit must be written to a logic one to trigger the
EEPROM read. The EEPROM read access takes one instruction, and the requested data is
available immediately. When the EEPROM is read, the CPU is halted for four cycles before the
next instruction is executed.
The user should poll the EEPE bit before starting the read operation. If a write operation is in
progress, it is neither possible to read the EEPROM, nor to change the EEAR Register.
The calibrated Oscillator is used to time the EEPROM accesses. Table 5-2 lists the typical pro-
gramming time for EEPROM access from the CPU.
The following code examples show one assembly and one C function for writing to the
EEPROM. The examples assume that interrupts are controlled (e.g. by disabling interrupts glob-
ally) so that no interrupts will occur during execution of these functions. The examples also
Table 5-2.
EEPROM Programming Time
Symbol
Number of Calibrated RC Oscillator Cycles
Typ Programming Time
EEPROM write
(from CPU)
26,368
3.3 ms
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF16V8B-10NM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable PLD |
| ATF16V8B-10NM/883 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable PLD |
| ATF16V8B-10PC | 功能描述:EEPLD - 電子擦除可編程邏輯設備 10NS250 GATES 20 PIN5V - 10NS RoHS:否 制造商:Atmel 邏輯系列:ATF16V8BQL 最大工作頻率:62 MHz 可編程輸入/輸出端數(shù)量:20 電源電流:20 mA 延遲時間:15 ns 每個宏指令的積項數(shù):8 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 大電池數(shù)量:8 最小工作溫度:- 40 C 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-20 |
| ATF16V8B-10PI | 功能描述:EEPLD - 電子擦除可編程邏輯設備 10NS 250 GTE EPLD 5V GRN 10NS IND TEMP RoHS:否 制造商:Atmel 邏輯系列:ATF16V8BQL 最大工作頻率:62 MHz 可編程輸入/輸出端數(shù)量:20 電源電流:20 mA 延遲時間:15 ns 每個宏指令的積項數(shù):8 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 大電池數(shù)量:8 最小工作溫度:- 40 C 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-20 |
| ATF16V8B-10SC | 功能描述:EEPLD - 電子擦除可編程邏輯設備 10NS250 GATES 20 PIN5V - 10NS RoHS:否 制造商:Atmel 邏輯系列:ATF16V8BQL 最大工作頻率:62 MHz 可編程輸入/輸出端數(shù)量:20 電源電流:20 mA 延遲時間:15 ns 每個宏指令的積項數(shù):8 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 大電池數(shù)量:8 最小工作溫度:- 40 C 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-20 |
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