- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362510 > ATF13786 Surface Mount Gallium Arsenide FET for Oscillators PDF資料下載
參數(shù)資料
| 型號： | ATF13786 |
| 英文描述： | Surface Mount Gallium Arsenide FET for Oscillators |
| 中文描述： | 表面貼裝的砷化鎵場效應(yīng)晶體管振蕩器 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 47K |
| 代理商： | ATF13786 |
5-43
ATF-13786
Surface Mount Gallium
Arsenide FET for Oscillators
Technical Data
85 mil Plastic Surface
Mount Package
Features
Low Cost Surface Mount
Plastic Package
High f
MAX
:
60 GHz Typical
Low Phase Noise at 10 GHz:
-110 dBc/Hz @ 100 kHz Typical
Output Power at 10 GHz:
up to 10 dBm
Tape-and-Reel Packaging
Option Available
Description
Hewlett-Packard’s ATF-13786 is a
low cost Gallium Arsenide
Schottky barrier-gate field effect
transistor housed in a surface
mount plastic package. This
device is designed for use in low
cost, surface mount oscillators
operating over the RF and
microwave frequency ranges. The
ATF-13786 has sufficient gain for
easy use as a negative R cell,
without excess gain that can lead
to unwanted oscillations and
mode jumping. The gate structure
used in the fabrication of this
device results in phase noise
performance superior to that of
most other MESFETs. These
features make this device
particularly well suited for low
power (< +10 dBm) commercial
oscillator applications such as are
encountered in DBS, TVRO, and
MMDS television receivers, or
hand-held transceivers operating
in the 900 MHz, 2.4 GHz, and
5.7GHz ISM bands.
Insertion Power Gain, Maximum
Available Gain, and Maximum Stable
Gain vs. Frequency.
V
DS
= 3 V, I
DS
= 40 mA.
Pin Configuration
5
10
20
1
5
10
15
20
FREQUENCY (GHz)
G
S
21
25
MSG
MSG
0
MAG
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
1
4
3
2
SOURCE
SOURCE
DRAIN
GATE
1
5965-8721E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-13786 | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786-TR1 | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF13786 | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786 | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786-STR | Surface Mount Gallium Arsenide FET for Oscillators |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-13786 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786-STR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13XXX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Noise Gallium Arsenide FET -- Reliability Data (20K in pdf) |
| ATF-1402 | 制造商:L COM 功能描述:CON,TNC FEMALE CRIMP LMR400 制造商:L-com Inc 功能描述:CON,TNC FEMALE CRIMP LMR400 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。