參數(shù)資料
型號(hào): ATF-58143-TR2G
元件分類: 小信號(hào)晶體管
英文描述: C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: LEAD FREE, PLASTIC, SC-70, 4 PIN
文件頁(yè)數(shù): 3/9頁(yè)
文件大小: 232K
代理商: ATF-58143-TR2G
3
ATF-58143 Electrical Specifications
T
A = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.[2]
Max.
Vgs
Operational Gate Voltage
Vds = 3V, Ids = 30 mA
V
0.4
0.51
0.75
Vth
Threshold Voltage
Vds = 3V, Ids = 4 mA
V
0.18
0.38
0.52
Idss
Saturated Drain Current
Vds = 3V, Vgs = 0V
A
1
5
Gm
Transconductance
Vds = 3V,
mmho
230
410
560
gm =
Idss/Vgs;
Vgs = 0.75 –0.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = 3V
A
200
NF
Noise Figure [1]
f = 2 GHz
Vds = 3V, Ids = 30 mA
dB
0.5
0.9
f = 900 MHz
Vds = 3V, Ids = 30 mA
dB
0.3
f = 2 GHz
Vds = 4V, Ids = 30 mA
dB
0.5
f = 900 MHz
Vds = 4V, Ids = 30 mA
dB
0.3
Ga
Associated Gain[1]
f = 2 GHz
Vds = 3V, Ids = 30 mA
dB
15
16.5
18.5
f = 900 MHz
Vds = 3V, Ids = 30 mA
dB
23.1
f = 2 GHz
Vds = 4V, Ids = 30 mA
dB
17.7
f = 900 MHz
Vds = 4V, Ids = 30 mA
dB
22.5
OIP3
Output 3rd Order
f = 2 GHz
Vds = 3V, Ids = 30 mA
dBm
29
30.5
Intercept Point[1]
f = 900 MHz
Vds = 3V, Ids = 30 mA
dBm
28.6
f = 2 GHz
Vds = 4V, Ids = 30 mA
dBm
31.5
f = 900 MHz
Vds = 4V, Ids = 30 mA
dBm
31.0
P1dB
1dB Compressed
f = 2 GHz
Vds = 3V, Ids = 30 mA
dBm
19
Output Power[1]
f = 900 MHz
Vds = 3V, Ids = 30 mA
dBm
18
f = 2 GHz
Vds = 4V, Ids = 30 mA
dBm
21
f = 900 MHz
Vds = 4V, Ids = 30 mA
dBm
19
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 3 wafers.
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and associated impedance matching circuit losses.
RFin
RFout
output
matching
0.7 dB loss
input
matching
0.6 dB loss
28.2 + j9.4
51 – j3.3
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