參數(shù)資料
型號: ATF-36163-BLKG
元件分類: 小信號晶體管
英文描述: KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: LEAD FREE, PLASTIC, SC-70, 6 PIN
文件頁數(shù): 9/10頁
文件大?。?/td> 174K
代理商: ATF-36163-BLKG
8
Figure 9. Smith Chart with Noise Figure and Available Gain Circles at
12 GHz, VDS = 1.5 V, ID = 10 mA.
ATF-36163 fig 9
11.5 dB
1.9 dB
1.4 dB
1.3 dB
1.2 dB
1.1 dB
10.5 dB
9.5 dB
Phase Reference Planes
The positions of the reference planes used to measure S-
Parameters and to specify Γopt for the Noise Parameters
are shown in Figure 10. As seen in the illustration, the
reference planes are located at the extremities of the
package leads.
REFERENCE
PLANES
TEST CIRCUIT
MGA-86563 fig 11
Figure 10. Reference Planes.
SOT-363 PCB Layout
A PCB pad layout for the miniature SOT-363 (SC-70)
package used by the ATF-36163 is shown in Figure
11 (dimensions are in inches). This layout provides
ample allowance for package placement by automated
assembly equipment. The layout is shown with a nominal
SOT-363 package footprint superimposed on the PCB.
pads. 0.026
0.079
0.018
0.039
Dimensions in inches.
Figure 11. Recommended PCB Pad Layout for Avago’s SC70 6L/SOT-363
Products (Dimensions in Inches).
相關(guān)PDF資料
PDF描述
ATF-45101 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
ATF-58143-TR2G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-58143-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-58143-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATP101 25 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-36163-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-36163-G 制造商:Avago Technologies 功能描述:Transistor,RF,PHEMT,9,5dB GA,ATF-36163
ATF-36163-TR1 制造商:AGILENT 制造商全稱:AGILENT 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT
ATF-36163-TR1G 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-36163-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: