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| 型號： | ATF-10xxx |
| 英文描述： | Low Noise Gallium Arsenide FET(低噪聲砷化鎵 FET) |
| 中文描述： | 低噪聲砷化鎵場效應(yīng)管（低噪聲砷化鎵場效應(yīng)管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 33K |
| 代理商： | ATF-10XXX |
Low Noise
Gallium Arsenide FE T
Reliability Data
Description
The following cumulative test re-
sults have been obtained from
testing performed at Agilent Tech-
nologies in accordance with the
latest revision of MIL-STD-883.
Data was gathered from the prod-
uct qualification, reliability
monitor, and engineering evalua-
tion for the LYG GaAs process.
For the purpose of this reliability
data sheet, a failure is any part
which fails to meet the electrical
and/or mechanical specification
listed in the product data sheet.
ATF-10xxx
ATF-13xxx
B. Failure Rate Prediction
The failure rate will depend on the
junction temperature of the
device. The estimated life at
different temperatures is
calculated, using the Arrhenius
plot with activation energy of
1.2 eV, and the device thermal
resistance of the stress board is
130
°
C/W, and is listed in the
following table.
Point
(1)
90% Confidence Level
(2)
J unction
Temp.
T
J
(
°
C)
175
150
100
47
MTTF*
(hours)
3 x 10
-6
2 x 10
-7
2 x 10
-9
8 x 10
-11
MTTF
FIT
( 3)
333
50
0.05
0.001
MTTF
(hours)
0.5 x 10
-6
9.5 x 10
-8
9.5 x 10
-8
3.5 x 10
-11
FIT
( 3)
2000
105
1.05
0.0003
*MTTF data calculated from high temperature Operating Life tests.
1. Life Test
A. Demonstrated Performance
Units
Tested
Total
Total
Failed
Failure Rate
(%/1K Hours)
Test Name
Test Conditions
Device Hrs.
High Temperature
Operating Life
(O.L.)
Nominal bias at
T
ch
= 175
°
C, 1000 hrs.
150
150,000
0
0
High Temperature
Storage (HTS)*
Ambient Temperature
T
A
= 150
°
C, 1000 hrs.
225
225,000
0
0
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