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| 型號(hào)： | ATF-10XXX |
| 英文描述： | Low Noise Gallium Arsenide FET -- Reliability Data (20K in pdf) |
| 中文描述： | 低噪聲砷化鎵場(chǎng)效應(yīng)管-可靠性數(shù)據(jù)（2萬(wàn)PDF格式） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 19K |
| 代理商： | ATF-10XXX |
Low Noise Gallium Arsenide FET
Reliability Data
Description
The following cumulative test
results have been obtained from
testing performed at Hewlett-
Packard in accordance with the
ATF-10XXX
ATF-13XXX
latest revision of MIL-STD-883.
Data was gathered from the
product qualification, reliability
monitor, and engineering evalua-
tion for the LYG GaAs process.
For the purpose of this reliability
data sheet, a failure is any part
which fails to meet the electrical
and/or mechanical specification
listed in the Communications
Components Designer's Catalog.
Units
Tested
150
Total
Total
Failed
Failure Rate
(%/1K Hours)
0
Test Name
High Temperature
Operating Life
(O.L.)
High Temperature
Storage (HTS)*
Test Condition
Nominal Bias at
T
ch
= 175
°
C, 1000 hrs.
Device Hrs.
15,000
0
Ambient Temperature
T
A
= 150
°
C, 1000 hrs.
225
225,000
0
0
1. Life Test
A. Demonstrated Performance
Point
(1)
90% Confidence Level
(2)
J unction
Temp.
T
J
(
°
C)
175
150
100
47
MTTF*
(hours)
3 x 10
-6
2 x 10
-7
2 x 10
-9
8 x 10
-11
MTTF
FIT
( 3)
333
50
.05
.001
MTTF
(hours)
0.5 x 10
-6
9.5 x 10
-8
9.5 x 10
-8
3.5 x 10
-11
FIT
( 3)
2000
105
1.05
.0003
*MTTF data calculated from high temperature Operating Life tests.
B. Failure Rate Prediction
The failure rate will depend on
the junction temperature of the
device. The estimated life at
different temperatures is calcu-
lated, using the Arrhenius plot
with activation energy of 1.2eV,
and the device thermal resistance
of the stress board is 130
°
C/W,
and listed in the following table.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-13XXX | Low Noise Gallium Arsenide FET -- Reliability Data (20K in pdf) |
| ATF-13100 | 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪聲砷化鎵 FET) |
| ATF-13100-GP3 | 2-18 GHz Low Noise Gallium Arsenide FET |
| ATF-13336 | 2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪聲砷化鎵 FET) |
| ATF-13736 | 2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪聲砷化鎵 FET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF13036 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | MICRO-X |
| ATF13100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | CHIP |
| ATF-13100 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Gallium Arsenide FET |
| ATF-13100-GP3 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Gallium Arsenide FET |
| ATF13136 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | MICRO-X |
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