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參數(shù)資料
| 型號(hào)： | AT93C56-10SI |
| 廠商： | ATMEL CORP |
| 元件分類： | PROM |
| 英文描述： | 3-Wire Serial EEPROMs |
| 中文描述： | 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.150 INCH, PLASTIC, SOIC-8 |
| 文件頁(yè)數(shù)： | 12/15頁(yè) |
| 文件大?。?/td> | 243K |
| 代理商： | AT93C56-10SI |
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AT93C46/56/66
0172O–08/01
Functional
Description
The AT93C46/56/66 is accessed via a simple and versatile 3-wire serial communication
interface. Device operation is controlled by seven instructions issued by the host pro-
cessor. A valid instruction starts with a rising edge of CS and consists of a Start Bit
(logic “1”) followed by the appropriate Op Code and the desired memory Address
location.
READ (READ): The Read (READ) instruction contains the Address code for the mem-
ory location to be read. After the instruction and address are decoded, data from the
selected memory location is available at the serial output pin DO. Output data changes
are synchronized with the rising edges of serial clock SK. It should be noted that a
dummy bit (logic “0”) precedes the 8- or 16-bit data output string.
ERASE/WRITE (EWEN): To assure data integrity, the part automatically goes into the
Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write Enable
(EWEN) instruction must be executed first before any programming instructions can be
carried out. Please note that once in the Erase/Write Enable state, programming
remains enabled until an Erase/Write Disable (EWDS) instruction is executed or V
CC
power is removed from the part.
ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified
memory location to the logical “1” state. The self-timed erase cycle starts once the
ERASE instruction and address are decoded. The DO pin outputs the READY/BUSY
status of the part if CS is brought high after being kept low for a minimum of 250 ns (t
CS).
A logic “1” at pin DO indicates that the selected memory location has been erased, and
the part is ready for another instruction.
WRITE (WRITE): The Write (WRITE) instruction contains the 8 or 16 bits of data to be
written into the specified memory location. The self-timed programming cycle, t
WP, starts
after the last bit of data is received at serial data input pin DI. The DO pin outputs the
READY/BUSY status of the part if CS is brought high after being kept low for a minimum
of 250 ns (t
CS). A logic “0” at DO indicates that programming is still in progress. A logic
“1” indicates that the memory location at the specified address has been written with the
data pattern contained in the instruction and the part is ready for further instructions. A
READY/BUSY status cannot be obtained if the CS is brought high after the end of
the self-timed programming cycle, t
WP.
ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the mem-
ory array to the logic “1” state and is primarily used for testing purposes. The DO pin
outputs the READY/BUSY status of the part if CS is brought high after being kept low for
a minimum of 250 ns (t
CS). The ERAL instruction is valid only at VCC = 5.0V ± 10%.
WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations
with the data patterns specified in the instruction. The DO pin outputs the READY/BUSY
status of the part if CS is brought high after being kept low for a minimum of 250 ns (t
CS).
The WRAL instruction is valid only at V
CC = 5.0V ± 10%.
ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the
Erase/Write Disable (EWDS) instruction disables all programming modes and should be
executed after all programming operations. The operation of the READ instruction is
independent of both the EWEN and EWDS instructions and can be executed at any
time.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT93C56-10SI-2.7 | 3-Wire Serial EEPROMs |
| AT93C56A-10PI-1.8 | 3-wire Serial EEPROMs 2K (256 x 8 or 128 x 16) |
| AT93C56A | 3-wire Serial EEPROMs 2K (256 x 8 or 128 x 16) |
| ATE2DGPC1 | TOGGLE SWITCH, DPDT, LATCHED, THROUGH HOLE-STRAIGHT |
| ATFC-0201-8N2-J-T | 1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT93C56-10SI-1.8 | 功能描述:IC EEPROM 2KBIT 2MHZ 8SOIC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| AT93C56-10SI-2.5 | 功能描述:IC EEPROM 2KBIT 2MHZ 8SOIC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
| AT93C56-10SI-2.7 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 1/2/4k 3-Wire Bus RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT93C56-10SI-2.7 SL383 | 功能描述:IC EEPROM 2KBIT 2MHZ 8SOIC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| AT93C56-10SI-2.7-T | 功能描述:IC EEPROM 2KBIT 2MHZ 8SOIC 制造商:microchip technology 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:EEPROM 技術(shù):EEPROM 存儲(chǔ)容量:2Kb （256 x 8，128 x 16） 時(shí)鐘頻率:2MHz 寫周期時(shí)間 - 字，頁(yè):10ms 存儲(chǔ)器接口:SPI 電壓 - 電源:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SOIC 基本零件編號(hào):AT93C56 標(biāo)準(zhǔn)包裝:3,000 |
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