參數(shù)資料
型號(hào): AT93C46A
廠商: Atmel Corp.
英文描述: 3-Wire Serial EEPROM 1K (64 x 16)
中文描述: 3線串行EEPROM每1000(64 × 16)
文件頁數(shù): 4/11頁
文件大?。?/td> 143K
代理商: AT93C46A
AT93C46A
4
Note:
Instruction Set for the AT93C46A
1. This parameter is characterized and is not 100% tested.
t
CSS
CS Setup Time
Relative to SK
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
50
50
100
200
ns
t
DIS
DI Setup Time
Relative to SK
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
100
100
200
400
ns
t
CSH
CS Hold Time
Relative to SK
0
ns
t
DIH
DI Hold Time
Relative to SK
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
100
100
200
400
ns
t
PD1
Output Delay to ‘1’
AC Test
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
PD0
Output Delay to ‘0’
AC Test
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
SV
CS to Status Valid
AC Test
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
250
250
500
1000
ns
t
DF
CS to DO in High Impedance
AC Test
CS = V
IL
4.5V
V
CC
5.5V
2.7V
V
CC
5.5V
2.5V
V
CC
5.5V
1.8V
V
CC
5.5V
100
100
200
400
ns
t
WP
Write Cycle Time
0.1
10
ms
4.5V
V
CC
5.5V
1
ms
Endurance
(1)
5.0V, 25
°
C, Page Mode
1M
Write
Cycle
Instruction
SB
Op Code
Address
Comments
x 16
READ
1
10
A
5
- A
0
Reads data stored in memory, at specified address.
EWEN
1
00
11XXXX
Write enable must precede all programming modes.
ERASE
1
11
A
5
- A
0
Erase memory location A
n
- A
0
.
WRITE
1
01
A
5
- A
0
Writes memory location A
n
- A
0
.
ERAL
1
00
10XXXX
Erases all memory locations. Valid only at V
CC
= 4.5V to 5.5V.
WRAL
1
00
01XXXX
Writes all memory locations. Valid only at V
CC
= 4.5V to 5.5V.
EWDS
1
00
00XXXX
Disables all programming instructions.
AC Characteristics (Continued)
Applicable over recommended operating range from T
A
= -40
°
C to + 85
°
C, V
CC
= +2.5V to + 5.5V,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol
Parameter
Test Condition
Min
Typ
Max
Units
相關(guān)PDF資料
PDF描述
AT93C46A-10TC-2.5 3-Wire Serial EEPROM 1K (64 x 16)
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