參數(shù)資料
型號: AT89C51ED2-SLRUM
廠商: Atmel
文件頁數(shù): 131/137頁
文件大小: 0K
描述: IC MCU FLASH 8051 64K 5V 44-PLCC
產品培訓模塊: MCU Product Line Introduction
標準包裝: 1
系列: 89C
核心處理器: 8051
芯體尺寸: 8-位
速度: 60MHz
連通性: SPI,UART/USART
外圍設備: POR,PWM,WDT
輸入/輸出數(shù): 34
程序存儲器容量: 64KB(64K x 8)
程序存儲器類型: 閃存
EEPROM 大小: 2K x 8
RAM 容量: 2K x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
振蕩器型: 外部
工作溫度: -40°C ~ 85°C
封裝/外殼: 44-LCC(J 形引線)
包裝: 標準包裝
其它名稱: AT89C51ED2-SLRUMDKR
93
4235K–8051–05/08
AT89C51RD2/ED2
24. Flash/EEPROM Memory
The Flash memory increases EEPROM and ROM functionality with in-circuit electrical erasure
and programming. It contains 64K bytes of program memory organized respectively in 512
pages of 128 bytes. This memory is both parallel and serial In-System Programmable (ISP). ISP
allows devices to alter their own program memory in the actual end product under software con-
trol. A default serial loader (bootloader) program allows ISP of the Flash.
The programming does not require external dedicated programming voltage. The necessary
high programming voltage is generated on-chip using the standard VCC pins of the
microcontroller.
24.1
Features
Flash EEPROM Internal Program Memory
Boot vector allows user provided Flash loader code to reside anywhere in the Flash memory
space. This configuration provides flexibility to the user.
Default loader in Boot ROM allows programming via the serial port without the need of a user
provided loader.
Up to 64K bytes external program memory if the internal program memory is disabled (EA =
0).
Programming and erasing voltage with standard power supply
Read/Programming/Erase:
– Byte-wise read without wait state
– Byte or page erase and programming (10 ms)
Typical programming time (64K bytes) is 22s with on chip serial bootloader
Parallel programming with 87C51 compatible hardware interface to programmer
Programmable security for the code in the Flash
100K write cycles
10 years data retention
24.2
Flash Programming and Erasure
The 64-K byte Flash is programmed by bytes or by pages of 128 bytes. It is not necessary to
erase a byte or a page before programming. The programming of a byte or a page includes a
self erase before programming.
There are three methods of programming the Flash memory:
1.
The on-chip ISP bootloader may be invoked which will use low level routines to pro-
gram the pages. The interface used for serial downloading of Flash is the UART.
2.
The Flash may be programmed or erased in the end-user application by calling low-
level routines through a common entry point in the Boot ROM.
3.
The Flash may be programmed using the parallel method by using a conventional
EPROM programmer. The parallel programming method used by these devices is simi-
lar to that used by EPROM 87C51 but it is not identical and the commercially available
programmers need to have support for the AT89C51RD2/ED2. The bootloader and the
Application Programming Interface (API) routines are located in the BOOT ROM.
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