參數(shù)資料
型號: AT89C51AC3-SLSUM
廠商: Atmel
文件頁數(shù): 113/140頁
文件大小: 0K
描述: IC 8051 MCU FLASH 64K 44PLCC
產(chǎn)品培訓(xùn)模塊: MCU Product Line Introduction
標(biāo)準(zhǔn)包裝: 972
系列: 89C
核心處理器: 8051
芯體尺寸: 8-位
速度: 60MHz
連通性: UART/USART
外圍設(shè)備: POR,PWM,WDT
輸入/輸出數(shù): 36
程序存儲(chǔ)器容量: 64KB(64K x 8)
程序存儲(chǔ)器類型: 閃存
EEPROM 大?。?/td> 2K x 8
RAM 容量: 2.25K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 外部
工作溫度: -40°C ~ 85°C
封裝/外殼: 44-LCC(J 形引線)
包裝: 管件
配用: AT89OCD-01-ND - USB EMULATOR FOR AT8XC51 MCU
dsPIC33FJXXXGPX06/X08/X10
DS70286C-page 72
2009 Microchip Technology Inc.
5.2
RTSP Operation
The dsPIC33FJXXXGPX06/X08/X10 Flash program
memory array is organized into rows of 64 instructions
or 192 bytes. RTSP allows the user to erase a page of
memory, which consists of eight rows (512 instructions)
at a time, and to program one row or one word at a
time. Table 25-12 illustrates typical erase and program-
ming times. The 8-row erase pages and single row
write rows are edge-aligned, from the beginning of pro-
gram memory, on boundaries of 1536 bytes and 192
bytes, respectively.
The program memory implements holding buffers that
can contain 64 instructions of programming data. Prior
to the actual programming operation, the write data
must be loaded into the buffers in sequential order. The
instruction words loaded must always be from a group
of 64 boundary.
The basic sequence for RTSP programming is to set up
a Table Pointer, then do a series of TBLWT instructions
to load the buffers. Programming is performed by
setting the control bits in the NVMCON register. A total
of 64 TBLWTL and TBLWTH instructions are required
to load the instructions.
All of the table write operations are single-word writes
(two instruction cycles) because only the buffers are
written. A programming cycle is required for
programming each row.
5.3
Programming Operations
A complete programming sequence is necessary for
programming or erasing the internal Flash in RTSP
mode.
The
processor
stalls
(waits)
until
the
programming operation is finished.
The programming time depends on the FRC accuracy
(see Table 25-19) and the value of the FRC Oscillator
Tuning register (see Register 9-4). Use the following
formula to calculate the minimum and maximum values
for the Row Write Time, Page Erase Time and Word
Write Cycle Time parameters (see Table 25-12).
EQUATION 5-1:
PROGRAMMING TIME
For example, if the device is operating at +85°C, the
FRC accuracy will be ±2%. If the TUN<5:0> bits (see
Register 9-4) are set to ‘b111111, the Minimum
Row Write Time is:
and, the Maximum Row Write Time is:
Setting the WR bit (NVMCON<15>) starts the opera-
tion, and the WR bit is automatically cleared when the
operation is finished.
5.4
Control Registers
There are two SFRs used to read and write the
program Flash memory:
The NVMCON register (Register 5-1) controls which
blocks are to be erased, which memory type is to be
programmed and the start of the programming cycle.
NVMKEY (Register 5-2) is a write-only register that is
used for write protection. To start a programming or
erase sequence, the user must consecutively write 55h
and AAh to the NVMKEY register. Refer to Section 5.3
“Programming Operations” for further details.
T
7.37 MHz
FRC Accuracy
()%
FRC Tuning
()%
×
--------------------------------------------------------------------------------------------------------------------------
TRW
11064 Cycles
7.37 MHz
10.02
+
()
1 0.00375
()
×
---------------------------------------------------------------------------------------------- 1.48ms
=
TRW
11064 Cycles
7.37 MHz
10.02
()
1 0.00375
()
×
---------------------------------------------------------------------------------------------- 1.54ms
=
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