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參數(shù)資料
| 型號： | AT6019M |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON ABRUPT JUNCTION TUNING VARACTOR |
| 中文描述： | 33 pF, 70 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
| 封裝： | GLASS, 15, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 23K |
| 代理商： | AT6019M |
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
REV. A
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
V
B
I
R
= 10
μ
A
C
T
V
R
= 4.0 V f = 1.0 MHz
C
T
C
T
= 0 V / C
T
= 60 V f = 1.0 MHz
C
T
C
T
= 8.0 V / C
T
= 60 V f = 1.0 MHz
Q
V
R
= 4.0 V f = 50 MHz
T
C
V
R
= 4.0 V
NONE
TEST CONDITIONS
MINIMUM
70
TYPICAL
MAXIMUM
UNITS
V
31.35
33.0
34.65
pF
7.4
RATIO
2.50
2.60
RATIO
800
300
Ppm/
O
C
SILICON ABRUPT JUNCTION TUNING VARACTOR
AT6019M
DESCRIPTION:
The
AT6019M
is an Epitaxial Silicon
Abrupt Junction Microwave Tuning
Varactor. This Device is Passivated
With Silicon Dioxide Which Results in
Very Low Leakage Current. The
Capacitance Voltage Relationship
Closley Approximates Square Law
(n = 0.5).
MAXIMUM RATINGS
I
C
100 mA
V
CE
70 V
P
DISS
250 mW @ T
C
= 25
O
C
-65
O
C to +150
O
C
-65
O
C to +150
O
C
T
J
T
STG
PACKAGE STYLE 15
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