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參數(shù)資料
| 型號： | AT49LV4096-12RI |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory |
| 中文描述： | 256K X 16 FLASH 5V PROM, 120 ns, PDSO44 |
| 封裝： | 0.525 INCH, PLASTIC, SOIC-44 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 176K |
| 代理商： | AT49LV4096-12RI |
4-Megabit
(256K x 16)
3-volt Only
CMOS Flash
Memory
AT49BV4096
AT49LV4096
Preliminary
Features
Low Voltage Operation
- 2.7V Read
- 5V Program/Erase
Fast Read Access Time - 120 ns
Internal Erase/Program Control
Sector Architecture
- One 8K Words (16K bytes) Boot Block with Programming Lockout
- Two 8K Words (16K bytes) Parameter Blocks
- One 232K Words (464K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Word-By-Word Programming - 10
μ
s/Word
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
- 25 mA Active Current
- 50
μ
A CMOS Standby Current
Typical 10,000 Write Cycles
Description
Pin Configurations
Pin Name
Function
A0 - A17
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
V
PP
Program/Erase
Power Supply
I/O0 - I/O15
Data
Inputs/Outputs
NC
No Connect
The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized
as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than
50
μ
A.
To allow for simple in-system reprogrammability, the AT49BV4096/LV4096 does not
require high input voltages for programming. Reading data out of the device is similar
to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus
(continued)
AT49BV4096/LV4096
A13
A11
A12
A10
A8
NC
WE
A9
NC
NC
A7
NC
A17
RESET
VPP
NC
1
3
5
2
4
6
10
9
7
8
1413
11
12
I/O3
I/O2
I/O11
I/O10
I/O9
VCC
I/O12I/O6
I/O7
I/O14
41
40
38
36
39
37
35
44
42
43
46
45
47
48
33
31
34
32
I/O1
15
17
16
18
A6
20
19
I/O8
I/O0
30
29
A5
A15
A14
I/O15A16
21
22
23
24
25
26
27
28
A4
A3
A2
A1
GND
OE
CE
A0
TSOP Top View
Type 1
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
27
26
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
25
24
NC
A17
A7
A6
A5
A4
A3
A2
A1
A0
GND
OE
I/O0
I/O8
I/O1
I/O9
I/O2
I/O10
I/O3
I/O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
VPP
23
CE
SOIC (SOP)
0874A–5/97
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PDF描述 |
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| AT49LV4096-12TC | 4-Megabit 256K x 16 3-volt Only CMOS Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AT49LV4096A-70TI | 制造商:Atmel Corporation 功能描述:NOR Flash Parallel 3.3V 4Mbit 512K/256K x 8bit/16bit 70ns 48-Pin TSOP-I |
| AT49LW040-33JC | 制造商:Atmel Corporation 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, PLCC |
| AT49LW080-33JC | 功能描述:IC FLASH 8MBIT 33MHZ 32PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| AT49LW080-33JC SL383 | 功能描述:IC FLASH 8MBIT 33MHZ 32PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| AT49LW080-33JC-T | 功能描述:IC FLASH 8MBIT 33MHZ 32PLCC 制造商:microchip technology 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH 存儲容量:8Mb （1M x 8） 時鐘頻率:33MHz 寫周期時間 - 字，頁:300μs 存儲器接口:并聯(lián) 電壓 - 電源:3 V ~ 3.6 V 工作溫度:0°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:32-LCC（J 形引線） 供應(yīng)商器件封裝:32-PLCC 基本零件編號:AT49LW080 標準包裝:750 |
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