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參數(shù)資料
| 型號(hào)： | AT49LV040 |
| 廠商： | Atmel Corp. |
| 英文描述： | 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory(512K x 8單電源2.7V Battery-Voltage技術(shù)閃速存儲(chǔ)器) |
| 中文描述： | 為512k × 8單2.7伏電池電壓快閃記憶體（為512k × 8單電源為2.7V電池電壓技術(shù)閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 278K |
| 代理商： | AT49LV040 |
1
4-megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV040
AT49BV040T
AT49LV040
AT49LV040T
Features
Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time – 70 ns
Internal Program Control and Timer
16K Bytes Boot Block with Lockout
Fast Chip Erase Cycle Time – 10 seconds
Byte-by-byte Programming – 30 μs/Byte Typical
Hardware Data Protection
Data Polling for End of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 μA CMOS Standby Current
Typical 10,000 Write Cycles
Small Packaging
– 8 x 14 mm VSOP/TSOP
Description
The AT49BV/LV040(T) are 3-volt only, 4-megabit Flash memories organized as
524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS
technology, the devices offer access times to 70 ns with power dissipation of just
90 mW over the commercial temperature range. When the device is deselected, the
CMOS standby current is less than 50 μA.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49BV/LV040 locates the boot block at lowest order
addresses (“bottom boot”); the AT49BV/LV040T locates it at highest order addresses
(“top boot”).
Rev. 0679C–04/00
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
3
3
3
1
1
1
1
1
1
2
I
I
G
I
I
I
I
A
A
A
A
V
W
A
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
(continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT49BV080 | 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位單電源2.7V Battery-Voltage技術(shù)閃速存儲(chǔ)器) |
| AT49LV080 | 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位單電源2.7V Battery-Voltage技術(shù)閃速存儲(chǔ)器) |
| AT49LV080T | 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位單電源2.7V Battery-Voltage技術(shù)閃速存儲(chǔ)器) |
| AT49BV1024A | 1-megabit (64K x 16) 3-volt Only Flash Memory |
| AT49LV1024A | 1-megabit (64K x 16) 3-volt Only Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT49LV040-12JC | 功能描述:閃存 4M bit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT49LV040-12JI | 功能描述:閃存 4M bit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT49LV040-12TC | 功能描述:閃存 4M bit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT49LV040-12TI | 功能描述:IC FLASH 4MBIT 120NS 32TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
| AT49LV040-12VC | 功能描述:閃存 4M bit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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