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參數(shù)資料
| 型號： | AT49LV040-90JC |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory |
| 中文描述： | 512K X 8 FLASH 3V PROM, 90 ns, PQCC32 |
| 封裝： | PLASTIC, MS-016AE, LCC-32 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 210K |
| 代理商： | AT49LV040-90JC |
1
4-Megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV040
AT49BV040T
AT49LV040
AT49LV040T
AT49BV/LV040
Features
Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time - 120 ns
Internal Program Control and Timer
16K bytes Boot Block With Lockout
Fast Chip Erase Cycle Time - 10 seconds
Byte-by-Byte Programming - 30
μ
s/Byte Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50
μ
A CMOS Standby Current
Typical 10,000 Write Cycles
Small Packaging
– 8 x 8 mm CBGA
– 8 x 14 mm V-TSOP
Description
The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288
words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS tech-
nology, the devices offer access times to 120 ns with power dissipation of just 90 mW
over the commercial temperature range. When the device is deselected, the CMOS
standby current is less than 50
μ
A.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49BV/LV040 locates the boot block at lowest order
addresses (“bottom boot”); the AT49BV/LV040T locates it at highest order addresses
(“top boot”).
0679AX-A–9/97
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
CBGA Top View
A
B
C
D
E
F
1
2
3
4
5
6
7
GND
A17
A10
A14
A16
A15
I/O6
I/O7
NC
A13
A11
A12
VCC
I/O4
I/O5
A9
WE
A8
VCC
NC
NC
NC
NC
NC
I/O2
NC
I/O3
NC
A7
A18
OE
I/O0
I/O1
A6
A4
A5
GND
CE
A0
A3
A1
A2
PLCC Top View
V - TSOP Top View (8 x 14 mm) or
T - TSOP Top View (8 x 20 mm)
(continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT49LV040-90JI | LM4910 Output Capacitor-less Stereo 35mW Headphone Amplifier; Package: SOIC NARROW; No of Pins: 8 |
| AT49LV040-90TC | 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory |
| AT49LV040-90TI | LM4910 Output Capacitor-less Stereo 35mW Headphone Amplifier; Package: MINI SOIC; No of Pins: 8 |
| AT49LV040-90VC | 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory |
| AT49LV040-90VI | LM4911 Stereo 40mW Low Noise Headphone Amplifier with Selectable Capacitive Coupled or OCL Output; Package: LLP; No of Pins: 10 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT49LV040-90JI | 功能描述:IC FLASH 4MBIT 90NS 32PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應(yīng)商設(shè)備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC |
| AT49LV040-90TC | 功能描述:閃存 4M bit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT49LV040-90TI | 功能描述:閃存 512Kx8 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT49LV040-90VC | 功能描述:IC FLASH 4MBIT 90NS 32VSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應(yīng)商設(shè)備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC |
| AT49LV040-90VI | 功能描述:IC FLASH 4MBIT 90NS 32VSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應(yīng)商設(shè)備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC |
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