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參數(shù)資料
| 型號(hào)： | AT49HF010 |
| 廠商： | Atmel Corp. |
| 英文描述： | 1-Megabit 5-volt Only Flash Memory(1M位5V系統(tǒng)內(nèi)可編程和擦除閃速存儲(chǔ)器) |
| 中文描述： | 1兆位5伏只有閃存（100萬(wàn)位5V的系統(tǒng)內(nèi)可編程和擦除閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 151K |
| 代理商： | AT49HF010 |
1
Features
Single Voltage Operation
– 5V Read
– 5V Reprogramming
Fast Read Access Time - 45 ns
Internal Program Control and Timer
8K Bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte-By-Byte Programming - 10 μs/Byte
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 30 mA Active Current
– 100 μA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F010/HF010 are 5-volt only in-system programmable and erasable Flash
Memories. Their 1 megabit of memory is organized as 131,072 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer
access times to 45 ns (HF version) with a power dissipation of just 165 mW over the
commercial temperature range. When the device is deselected, the CMOS standby
current is less than 100
μ
A.
1-Megabit
(128K x 8)
5-volt Only
Flash Memory
AT49F010
AT49HF010
Rev. 0852B–10/98
Pin Configurations
Pin Name
Function
A0 - A16
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
(continued)
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
3
3
3
1
1
1
1
1
1
2
I
I
G
I
I
I
I
A
A
A
N
V
W
N
DIP Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
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