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參數資料
| 型號： | AT49F4096A-90RC |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory |
| 中文描述： | 256K X 16 FLASH 5V PROM, 90 ns, PDSO44 |
| 封裝： | 0.525 INCH, PLASTIC, SOIC-44 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 243K |
| 代理商： | AT49F4096A-90RC |
1
Features
Single Voltage Operation
– 5V Read
– 5V Programming
Fast Read Access Time - 55 ns
Internal Erase/Program Control
Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 4K Words (8K bytes) Parameter Blocks
– One 240K Words (480K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Byte-by-Byte or Word-By-Word Programming - 10
μ
s Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low-Power Dissipation
– 50 mA Active Current
– 300
μ
A CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F004(T) and AT49F4096A(T) are 5-volt, 4-megabit Flash Memories orga-
nized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured
with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times
to 55 ns with power dissipation of just 275 mW. When deselected, the CMOS standby
current is less than 300
μ
A.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49F004/4096A locates the boot block at lowest order
addresses (“bottom boot”); the AT49F004T/4096AT locates it at highest order
addresses (“top boot”).
To allow for simple in-system reprogrammability, the AT49F004(T)/4096A(T) does not
require high input voltages for programming. Reading data out of the device is similar
to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus con-
tention. Reprogramming the AT49F004(T)/4096A(T) is performed by first erasing a
4-Megabit
(512K x 8/
256K x 16)
CMOS Flash
Memory
AT49F004
AT49F004T
AT49F4096A
AT49F4096AT
Preliminary
Rev. 1167A–09/98
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
Ready/Busy Output
I/O0 - I/O14
Data Inputs/Outputs
I/O15(A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
No Connect
(continued)
相關PDF資料 |
PDF描述 |
|---|---|
| AT49F4096AT-90RC | 4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory |
| AT49F4096A-55RC | Quadruple 2-Input Exclusive-OR Gates 14-SOIC -40 to 85 |
| AT49F4096A-55TC | Quadruple 2-Input Exclusive-OR Gates 14-TVSOP -40 to 85 |
| AT49F4096A-70RC | Quadruple 2-Input Exclusive-OR Gates 14-TVSOP -40 to 85 |
| AT49F4096A-70RI | Quadruple 2-Input Exclusive-OR Gates 14-TVSOP -40 to 85 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT49F4096A-90RI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory |
| AT49F4096A-90TC | 功能描述:IC FLASH 4MBIT 90NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:32 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (128K x 8) 速度:120ns 接口:并聯 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:32-LCC（J 形引線） 供應商設備封裝:32-PLCC 包裝:管件 其它名稱:AT49BV00112JC |
| AT49F4096A-90TI | 功能描述:閃存 4M (256kx16) RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT49F4096AT | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory |
| AT49F4096AT-55RC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory |
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