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參數(shù)資料
| 型號： | AT49F008AT |
| 廠商： | Atmel Corp. |
| 英文描述： | 8-megabit 5-volt Flash Memory(8M位 5V閃速存儲器) |
| 中文描述： | 8兆位5伏快閃記憶體（800萬位5V的閃速存儲器） |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 305K |
| 代理商： | AT49F008AT |
1
Features
Single-voltage Operation
– 5V Read
– 5V Programming
Fast Read Access Time
–
90 ns
Internal Erase/Program Control
Sector Architecture
–
One 8K Word (16K Bytes) Boot Block with Programming Lockout
–
Two 4K Word (8K Bytes) Parameter Blocks
–
One 496K Word (992K Bytes) Main Memory Array Block
Fast Sector Erase Time
–
10 seconds
Byte-by-byte or Word-by-word Programming
–
10 μs Typical
Hardware Data Protection
Data Polling for End of Program Detection
Low Power Dissipation
–
50 mA Active Current
–
100 μA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F008A(T) and AT49F8192A(T) are 5-volt, 8-megabit Flash memories orga-
nized as 1,048,576 words of 8 bits each or 512K words of 16 bits each. Manufactured
with Atmel
’
s advanced nonvolatile CMOS technology, the devices offer access times
to 90 ns with power dissipation of just 275 mW. When deselected, the CMOS standby
current is less than 100 μA.
The device contains a user-enabled
“
boot block
”
protection feature. Two versions of
the feature are available: the AT49F008A/8192A locates the boot block at lowest
order addresses (
“
bottom boot
”
); the AT49F008AT/8192AT locates it at highest order
addresses (
“
top boot
”
).
To allow for simple in-system reprogrammability, the AT49F008A(T)/8192A(T) does
not require high-input voltages for programming. Reading data out of the device is
similar to reading from an EPROM; it has standard CE, OE and WE inputs to avoid
bus contention. Reprogramming the AT49F008A(T)/8192A(T) is performed by first
erasing a block of data and then programming on a byte-by-byte or word-by-word
basis.
8-megabit
(1M x 8/
512K x 16)
Flash Memory
AT49F008A
AT49F008AT
AT49F8192A
AT49F8192AT
Rev. 1199E
–
06/00
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
Ready/Busy Output
I/O0 - I/O14
Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
No Connect
(continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT49F8192T-90RC | 8-Megabit 512K x 16 5-volt Only CMOS Flash Memory |
| AT49F8192 | 8-Megabit 512K x 16 5-volt Only CMOS Flash Memory |
| AT49F8192-12RC | Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125 |
| AT49F8192-12RI | Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125 |
| AT49F8192-12TC | Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT49F008AT-12CC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT49F008AT-12CI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT49F008AT-12TC | 功能描述:閃存 8M bit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT49F008AT-12TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT49F008AT-70CC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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