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參數(shù)資料
| 型號： | AT49BV8192AT |
| 廠商： | Atmel Corp. |
| 英文描述： | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory |
| 中文描述： | 8兆100萬× 8 /為512k × 16的CMOS閃存 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 246K |
| 代理商： | AT49BV8192AT |
1
Features
2.7V to 3.6V Read/Write Operation
Fast Read Access Time - 120 ns
Internal Erase/Program Control
Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 4K Words (8K bytes) Parameter Blocks
– One 496K Words (992K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Byte-by-Byte or Word-By-Word Programming - 30
μ
s Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low-Power Dissipation
– 25 mA Active Current
– 50
μ
A CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV008A(T) and AT49BV8192A(T) are 3-volt, 8-megabit Flash Memories
organized as 1,048,576 words of 8 bits each or 512K words of 16 bits each. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access
times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected,
the CMOS standby current is less than 50
μ
A.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49BV008A/8192A locates the boot block at lowest
order addresses (“bottom boot”); the AT49BV008AT/8192AT locates it at highest
order addresses (“top boot”).
To allow for simple in-system reprogrammability, the AT49BV008A(T)/8192A(T) does
not require high input voltages for programming. Reading data out of the device is
similar to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid
bus contention. Reprogramming the AT49BV008A(T)/8192A(T) is performed by first
erasing a block of data and then programming on a byte-by-byte or word-by-word
basis.
8-Megabit
(1M x 8/
512K x 16)
CMOS Flash
Memory
AT49BV008A
AT49BV008AT
AT49BV8192A
AT49BV8192AT
Preliminary
Rev. 1049C–09/98
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
Ready/Busy Output
VPP
Optional Power Supply for Faster
Program/Erase Operations
I/O0 - I/O14
Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
No Connect
(continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT49BV8192AT-12CC | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory |
| AT49BV8192AT-12CI | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory |
| AT49BV8192AT-12TC | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory |
| AT49BV8192AT-12TI | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory |
| AT49BV8192AT-15CC | 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT49BV8192AT-11CC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| AT49BV8192AT-11CI | 功能描述:IC FLASH 8MBIT 110NS 48CBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA（7x7） 包裝:托盤 |
| AT49BV8192AT-11TC | 功能描述:IC FLASH 8MBIT 110NS 48TSOP 制造商:microchip technology 系列:- 包裝:托盤 零件狀態(tài):停產(chǎn) 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH 存儲容量:8Mb （1M x 8，512K x 16） 寫周期時間 - 字，頁:30μs 訪問時間:110ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C（TC） 安裝類型:表面貼裝 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商器件封裝:48-TSOP 基本零件編號:AT49BV8192 標準包裝:96 |
| AT49BV8192AT-11TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|512KX16/1MX8|CMOS|TSSOP|48PIN|PLASTIC |
| AT49BV8192AT-12CC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory |
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