參數(shù)資料
型號(hào)： AT49BV8004-90TC
廠商： ATMEL CORP
元件分類： PROM
英文描述： 1M X 8 FLASH 3V PROM, 90 ns, PDSO48
封裝： PLASTIC, TSOP 1-48
文件頁數(shù)： 6/21頁
文件大?。?/td> 415K
代理商： AT49BV8004-90TC
AT49BV8011(T)/8004(T)
14
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes:
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased. (See
note 3 under command definitions.)
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
4. The t
WPH time between the 5th and 6th bus cycle should be a minimum of 150 ns.
Program Cycle Characteristics
Symbol
Parameter
Min
Typ
Max
Units
t
BP
Byte/Word Programming Time
20
50
s
tAS
Address Set-up Time
0
ns
t
AH
Address Hold Time
100
ns
t
DS
Data Set-up Time
100
ns
tDH
Data Hold Time
0
ns
t
WP
Write Pulse Width
100
ns
t
WPH
Write Pulse Width High
50
ns
tEC
Chip Erase Cycle Time
10
seconds
t
SEC
Sector Erase Cycle Time
200
ms
OE
PROGRAM CYCLE
INPUT
DATA
ADDRESS
A0
55
5555
AA
2AAA
tBP
tWPH
tWP
CE
WE
A0 -A18
DATA
tAS
tAH
tDH
tDS
5555
AA
OE
(1)
AA
80
Note 3
55
5555
Note 2
AA
WORD 0
WORD 1
WORD 2
WORD 3
WORD 4
WORD 5
2AAA
tWPH
tWP
CE
WE
A0-A18
DATA
tAS
tAH
tEC
tDH
tDS
5555
(4)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT49BV8011 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
AT49BV8011-11CI 功能描述:IC FLASH 8MBIT 110NS 48CBGA 制造商:microchip technology 系列:- 包裝:托盤 零件狀態(tài):停產(chǎn) 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH 存儲(chǔ)容量:8Mb （1M x 8，512K x 16） 寫周期時(shí)間 - 字，頁:50μs 訪問時(shí)間:110ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.3 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:48-VFBGA，CSBGA 供應(yīng)商器件封裝:48-CBGA（6x8） 基本零件編號(hào):AT49BV8011 標(biāo)準(zhǔn)包裝:360
AT49BV8011-12CC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
AT49BV8011-12CI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
AT49BV8011-12TC 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
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