參數(shù)資料
型號(hào)： AT49BV6416
廠商： Atmel Corp.
英文描述： 64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
中文描述： 64兆位（4米× 16）頁(yè)模式2.7伏的快閃記憶體
文件頁(yè)數(shù)： 1/30頁(yè)
文件大小： 293K
代理商： AT49BV6416
Features
64-megabit (4M x 16) Flash Memory
2.7V - 3.6V Read/Write
High Performance
– Asynchronous Access Time – 70 ns
– Page Mode Read Time – 20 ns
Sector Erase Architecture
– Eight 4K Word Sectors with Individual Write Lockout
– One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout
Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 200 ms
Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not Being
Programmed/Erased
– Memory Plane A: 16M of Memory Including Eight 4K Word Sectors
– Memory Plane B: 16M of Memory Consisting of 32K Word Sectors
– Memory Plane C: 16M of Memory Consisting of 32K Word Sectors
– Memory Plane D: 16M of Memory Consisting of 32K Word Sectors
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming Data from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
Low-power Operation
– 30 mA Active
– 35 μA Standby
2.2V I/O Option Reduces Overall System Power
Data Polling and Toggle Bit for End of Program Detection
VPP Pin for Write Protection and Accelerated Program Operations
RESET Input for Device Initialization
TSOP Package
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Common Flash Interface (CFI)
Green (Pb/Halide-free) Packaging Option
1.
The AT49BV6416(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided
into multiple sectors and planes for erase operations. The device can be read or
reprogrammed off a single 2.7V power supply, making it ideally suited for in-system
programming. The output voltage can be separately controlled down to 2.2V through
the VCCQ supply pin. The device can operate in the asynchronous or page read
mode.
Description
The AT49BV6416(T) is divided into four memory planes. A read operation can occur
in any of the three planes which is not being programmed or erased. This concurrent
operation allows improved system performance by not requiring the system to wait for
a program or erase operation to complete before a read is performed. To further
increase the flexibility of the device, it contains an Erase Suspend and Program Sus-
pend feature. This feature will put the erase or program on hold for any amount of time
and let the user read data from or program data to any of the remaining sectors. There
is no reason to suspend the erase or program operation if the data to be read is in
another memory plane. The end of program or erase is detected by Data Polling or
toggle bit.
64-megabit
(4M x 16)
Page Mode
2.7-volt Flash
Memory
AT49BV6416
AT49BV6416T
3451C–FLASH–2/05
相關(guān)PDF資料
PDF描述
AT49BV6416-70TI 64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416-70TU 64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416T 64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV6416T-70TI 64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
AT49BV8011 8-megabit 3-volt Flash Memory(8M位 3V閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT49BV6416(T) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AT49BV6416(T)/BN6416(T) Advance Information [Updated 5/03. 38 Pages] 64M bit. 2.7-Volt Burst and Page Mode Flash Memory
AT49BV6416-70TI 功能描述:IC FLASH 64MBIT 70NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
AT49BV6416-70TI SL383 功能描述:IC FLASH 64MBIT 70NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
AT49BV6416-70TI-T 功能描述:IC FLASH 64MBIT 70NS 48TSOP 制造商:microchip technology 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH 存儲(chǔ)容量:64Mb （4M x 16） 寫周期時(shí)間 - 字，頁(yè):15μs 訪問(wèn)時(shí)間:70ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:48-TSOP 基本零件編號(hào):AT49BV6416 標(biāo)準(zhǔn)包裝:1,000
AT49BV6416-70TU 功能描述:IC FLASH 64MBIT 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
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