參數(shù)資料
型號： AT49BV1614AT-70TI
廠商： ATMEL CORP
元件分類： DRAM
英文描述： 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory
中文描述： 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP1-48
文件頁數(shù)： 1/26頁
文件大?。?/td> 410K
代理商： AT49BV1614AT-70TI
1
Features
Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
Access Time – 70 ns
Sector Erase Architecture
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 20 μs
Fast Sector Erase Time – 300 ms
Dual-plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low-power Operation
– 30 mA Active
– 10 μA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Accelerated Program/Erase Operations
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Description
The AT49BV/LV16X4A(T) is a 2.65- to 3.3-volt 16-megabit Flash memory organized
as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 39 sectors for erase operations. The device is offered in 48-lead TSOP and
48-ball CBGA packages. The device has CE and OE control signals to avoid any bus
contention. This device can be read or reprogrammed using a single 2.65V power
supply, making it ideally suited for in-system programming.
Pin Configurations
Pin Name
Function
A0 - A19
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
READY/BUSY Output
VPP
Power Supply for Accelerated Program/Erase Operations
I/O0 - I/O14
Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
No Connect
VCCQ
Output Power Supply
16-megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
AT49BV1604A
AT49BV1604AT
AT49BV1614A
AT49LV1614A
AT49BV1614AT
AT49LV1614AT
Rev. 1411F–FLASH–03/02
相關(guān)PDF資料
PDF描述
AT49BV1614AT-90CI 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1614AT-90TI 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1614AT-70CI 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49LV1614AT-70CI 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49LV1614A 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT49BV1614AT-90CI 功能描述:IC FLASH 16MBIT 90NS 48CBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤
AT49BV1614AT-90TI 功能描述:IC FLASH 16MBIT 90NS 48CBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤
AT49BV1614T 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1614T-11CI 功能描述:IC FLASH 16MBIT 110NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
AT49BV1614T-11TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
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