參數(shù)資料
型號: AT49BV160CT-70TI
廠商: ATMEL CORP
元件分類: DRAM
英文描述: 16-megabit (1M x 16) 3-volt Only Flash Memory
中文描述: 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
文件頁數(shù): 1/30頁
文件大?。?/td> 236K
代理商: AT49BV160CT-70TI
1
Features
Single Voltage Read/Write Operation: 2.65V to 3.6V
Access Time – 70 ns
Sector Erase Architecture
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 12 μs
Fast Sector Erase Time – 300 ms
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
Low-power Operation
– 12 mA Active
– 13 μA Standby
VPP Pin for Write Protection
WP Pin for Sector Protection
RESET Input for Device Initialization
Flexible Sector Protection
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
Description
The AT49BV160C(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576
words of 16 bits each. The memory is divided into 39 sectors for erase operations.
The device is offered in a 48-lead TSOP and a 46-ball CBGA package. The device has
CE and OE control signals to avoid any bus contention. This device can be read or
reprogrammed using a single power supply, making it ideally suited for in-system
programming.
16-megabit
(1M x 16)
3-volt Only
Flash Memory
AT49BV160C
AT49BV160CT
Pin Configurations
Pin Name
Function
A0 - A19
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
VPP
Write Protection
I/O0 - I/O15
Data Inputs/Outputs
NC
No Connect
VCCQ
Output Power Supply
WP
Write Protect
3367D–FLASH–5/04
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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