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參數(shù)資料
| 型號： | AT49BV1604-11UI |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory |
| 中文描述： | 1M X 16 FLASH 3V PROM, 110 ns, PBGA48 |
| 封裝： | MICRO, BGA-48 |
| 文件頁數(shù)： | 2/18頁 |
| 文件大小： | 214K |
| 代理商： | AT49BV1604-11UI |
AT49BV16X4(T)
2
The device powers on in the read mode. Command
sequences are used to place the device in other operation
modes such as program and erase. The device has the
capability to protect the data in any sector. Once the data
protection for a given sector is enabled, the data in that
sector cannot be changed using input levels between
ground and V
CC
.
The device is segmented into two memory planes. Reads
from memory plane B may be performed even while pro-
gram or erase functions are being executed in memory
plane A and vice versa. This operation allows improved
system performance by not requiring the system to wait for
a program or erase operation to complete before a read is
performed. To further increase the flexibility of the device, it
contains an Erase Suspend feature. This feature will put
the Erase on hold for any amount of time and let the user
read data from or program data to any of the remaining
sectors within the same memory plane. There is no reason
to suspend the erase operation if the data to be read is in
the other memory plane. The end of a program or an Erase
cycle is detected by the Ready/Busy pin, Data polling, or by
the toggle bit.
A V
PP
pin is provided to improve program/erase times at
lower supply voltages. This pin does not need to be uti-
lized. If it is not used the pin should be connected to ground
or V
CC
. To take advantage of faster programming, the pin
should supply 5.0 volts during program and erase opera-
tions.
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
VPP
NC
A19
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
VCCQ
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
CBGA Top View
1
2
3
4
5
6
H
G
F
E
D
C
B
VSS
I/O1
I/O3
I/O4
I/O6
VSS
OE
I/O9
I/O11
VCC
I/O13
I/O15
/A-1
CE
I/O8
I/O10
I/O12
I/O14
BYTE
A0
I/O0
I/O2
I/O5
I/O7
A16
A1
A5
NC
A19
A11
A15
A2
A6
A18
NC
A10
A14
A4
A17
NC
RESET
A8
A12
A3
A7
RDY/BUSY
WE
A9
A13
A
μ
BGA Top View (Ball Down)
A
B
C
D
E
F
1
2
3
4
5
6
7
A13
A14
A15
A16
VCCQ
GND
A11
A10
A12
I/O14
I/O15
I/O7
A8
WE
A9
I/O5
I/O6
I/O13
VPP
RST
NC
I/O11
I/O12
I/O4
NC
A18
NC
I/O2
I/O3
VCC
A19
A17
A6
I/O8
I/O9
I/O10
A7
A5
A3
CE
I/O0
I/O1
A4
A2
A1
A0
GND
OE
8
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
RESET
VPP
NC
RDY/BUSY
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
BYTE
GND
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
AT49BV1604(T)
AT49BV1614(T)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT49BV1604-12TC | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV1604 | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV1604-12TI | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV1604-12UC | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV1604-12UI | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT49BV1604-12TC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV1604-12TI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory |
| AT49BV1604-12UC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| AT49BV1604-12UI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory |
| AT49BV1604-90TC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
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