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參數(shù)資料
| 型號： | AT49BV080T-12RC |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| 中文描述： | 1M X 8 FLASH 2.7V PROM, 120 ns, PDSO44 |
| 封裝： | 0.525 INCH, PLASTIC, SOIC-44 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 201K |
| 代理商： | AT49BV080T-12RC |
8-Megabit
(1M x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV080
AT49BV080T
AT49LV080
AT49LV080T
Features
Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time - 120 ns
Internal Program Control and Timer
16K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte-By-Byte Programming - 30
μ
s/Byte Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
- 25 mA Active Current
- 50
μ
A CMOS Standby Current
Typical 10,000 Write Cycles
Small Packaging
- 8 x 14 mm CBGA
Pin Configurations
Pin Name
Function
A0 - A19
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
Ready/Busy Output
I/O0 - I/O7
Data Inputs/Outputs
The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 mega-
bits of memory are organized as 1,024,576 words by 8 bits. Manufactured with At-
mel’s advanced nonvolatile CMOS technology, the devices offer access times to 120
ns with power dissipation of just 90 mW over the commercial temperature range.
When the device is deselected, the CMOS standby current is less than 50
μ
A.
The device contains a user-enabled "boot block" protection feature. Two versions of
the feature are available: the AT49BV/LV080 locates the boot block at lowest order
addresses ("bottom boot"); the AT49BVLV080T locates it at highest order addresses
("top boot").
Description
(continued)
TSOP Top View
Type 1
0812A–8/97
A
B
C
D
E
F
1
2
3
4
5
6
7
A5
A4
A6
A3
A2
A1
A8
A7
A9
I/O1
A0
I/O0
A11
A10
RST
NC
I/O3
I/O2
NC
VCC
CE
VCC
GND
GND
A12
A13
A14
I/O4
I/O6
I/O5
A15
NC
A16
I/O7
OE
RY/BY
A17
A18
A19
NC
NC
WE
CBGA Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
RESET
A11
A10
A9
A8
A7
A6
A5
A4
NC
NC
A3
A2
A1
A0
I/O0
I/O1
I/O2
I/O3
GND
GND
VCC
CE
A12
A13
A14
A15
A16
A17
A18
A19
NC
NC
NC
NC
WE
OE
RDY/BUSY
I/O7
I/O6
I/O5
I/O4
VCC
SOIC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT49LV080T-12RC | 8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV080T-12RI | 8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49LV080T-12RI | 8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT48BV080T-12TC | 8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT48LV080T-12TC | IGBT Chips; Package: --; Technology: IGBT 3; V<sub>DS</sub> (max): 1,200.0 V; I<sub>C </sub>(max): 15.0 A; V<sub>CE(sat)</sub> (max): 2.1 V; V<sub>GE(th)</sub> (min): 5.0 V; |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT49BV080T-12RI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV080T-12TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT49BV080T-12TI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV080T-15CC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV080T-15CI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory |
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