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參數(shù)資料
| 型號： | AT49BV040T-20TI |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| 中文描述： | 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32 |
| 封裝： | 8 X 20 MM, PLASTIC, MO-142BD, TSOP-32 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 210K |
| 代理商： | AT49BV040T-20TI |
AT49BV/LV040
6
Input Test Waveforms and Measurement level
t
R
, t
F
< 5 ns
Output test Load
AC Read Waveforms
(1)(2)(3)(4)
Notes:
1.
2.
CE may be delayed up to t
ACC
- t
CE
after the address transition without impact on t
ACC
.
OE may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE
or by t
ACC
- t
OE
after an address
change without impact on t
ACC
.
t
DF
is specified from OE or CE whichever occurs first (CL = 5 pF).
This parameter is characterized and is not 100% tested.
3.
4.
AC Read Characteristics
Symbol
Parameter
AT49BV/LV040-12
AT49BV/LV040-15
AT49BV/LV040-20
Units
Min
Max
Min
Max
Min
Max
t
ACC
t
CE(1)
t
OE(2)
t
DF(3)(4)
Address to Output Delay
120
150
200
ns
CE to Output Delay
120
150
200
ns
OE to Output Delay
0
50
0
70
0
80
ns
CE or OE to Output Float
0
30
0
40
0
50
ns
t
OH
Output Hold from OE, CE or Address,
whichever comes first
0
0
0
ns
Pin Capacitance
(f = 1 MHz, T = 25°C)
(1)
Note:
1.
This parameter is characterized and is not 100% tested.
Typ
Max
Units
Conditions
C
IN
C
OUT
4
6
pF
V
IN
= 0V
V
OUT
= 0V
8
12
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT49BV040T-20VC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV040T-20VI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV040T-90JC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT49BV040T-90JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT49BV040T-90TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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