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參數(shù)資料
| 型號(hào)： | AT49BV020-12JI |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | HV7 WIMAX 1.6GHZ NI780HS |
| 中文描述： | 256K X 8 FLASH 2.7V PROM, 120 ns, PQCC32 |
| 封裝： | PLASTIC, MS-016AE, LCC-32 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 167K |
| 代理商： | AT49BV020-12JI |
1
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Fast Read Access Time - 70 ns
Internal Program Control and Timer
8K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 30
μ
s/Byte typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50
μ
A CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV020 and the AT49LV020 are 3-volt-only, 2 megabit Flash memories
organized as 262,144 words of 8 bits each. Manufactured with Atmel's advanced non-
volatile CMOS technology, the devices offer access times to 70 ns with power dissipa-
tion of just 90 mW over the commercial temperature range. When the device is dese-
lected, the CMOS standby current is less than 50
μ
A.
To allow for simple in-system reprogrammability, the AT49BV/LV020 does not require
high input voltages for programming. Three-volt-only commands determine the read
and programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49BV/LV020 is performed by eras-
ing the entire 2 megabits of memory and then programming on a byte by byte basis.
The typical byte programming time is a fast 30
μ
s. The end of a program cycle can be
optionally detected by the DATA polling feature. Once the end of a byte program cycle
has been detected, a new access for a read or program can begin. The typical num-
ber of program and erase cycles is in excess of 10,000 cycles.
Pin Configuration
2-Megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV020
AT49LV020
Rev. 0678C–03/98
(continued)
Pin Name
Function
A0 - A17
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
PLCC Top View
VSOP Top View (8 x 14mm) or
TSOP Top View (8 x 20mm)
Type 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT49LV020-12TC | 2-Megabit 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV020-12TC | 2-Megabit 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49LV040-20VI | LM4908 Boomer ® Audio Power Amplifier Series 10kV ESD Rated, Dual 120 mW Headphone Amplifier; Package: SOIC NARROW; No of Pins: 8 |
| AT49BV040 | 4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV040-12JC | 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT49BV020-12TC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:2-Megabit 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV020-12TI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:2-Megabit 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV020-12VC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:2-Megabit 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV020-12VI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:2-Megabit 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
| AT49BV020-70JC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:2-Megabit 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory |
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